Embedded Silicon Nanocrystals Studied by Photoluminescence and Raman Spectroscopies: Exciton and Phonon Confinement Effects

2010 ◽  
Vol 114 (41) ◽  
pp. 17344-17349 ◽  
Author(s):  
Patrice Miska ◽  
Manuel Dossot ◽  
Thi D. Nguyen ◽  
Matthias Grün ◽  
Hervé Rinnert ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Phonon Confinement ◽  
Confinement Effects

scholarly journals Depth-Resolved Microspectroscopy of Porous Silicon Multilayers

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Manotas ◽  
F. Agulló-Rueda ◽  
J. D. Moreno ◽  
R. J. Martín-Palma ◽  
R. Guerrero-Lemus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Phonon Frequency ◽  
Lattice Mismatch ◽  
High Porosity ◽  
Phonon Confinement ◽  
Heating Effects ◽  
Average Size ◽  
Good Agreement

AbstractWe have measured micro-photoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. We find noticeable differences in the spectra of layers with different porosity, as expected from the quantum confinement of electrons and phonons in silicon nanocrystals with different average sizes. The PL emission band gets stronger, blue shifts, and narrows at the high porosity layers. The average size can be estimated from the shift. The Raman phonon band at 520 cm−1 weakens and broadens asymmetrically towards the low energy side. The line shape can be related quantitatively with the average size by the phonon confinement model. To get a good agreement with the model we add a band at around 480 cm−1, which has been attributed to amorphous silicon. We also have to leave as free parameters the bulk silicon phonon frequency and its line width, which depend on temperature and stress. We reduced laser power to eliminate heating effects. Then we use the change of frequency with depth to monitor the stress. At the interface with the substrate we find a compressive stress in excess of 10 kbar, which agrees with the reported lattice mismatch. Finally, average sizes are larger than those estimated from PL.

Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction

2009 ◽  
Vol 80 (2) ◽  
Author(s):  
B. Krenzer ◽  
A. Hanisch-Blicharski ◽  
P. Schneider ◽  
Th. Payer ◽  
S. Möllenbeck ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Phonon Confinement ◽  
Confinement Effects ◽  
Time Resolved ◽  
Bismuth Films

Phonon confinement effects in the Raman spectrum of nanodiamond

2009 ◽  
Vol 80 (7) ◽  
Author(s):  
S. Osswald ◽  
V. N. Mochalin ◽  
M. Havel ◽  
G. Yushin ◽  
Y. Gogotsi
Keyword(s):  
Raman Spectrum ◽  
Phonon Confinement ◽  
Confinement Effects

Raman spectrum of Si nanowires: temperature and phonon confinement effects

2013 ◽  
Vol 114 (4) ◽  
pp. 1321-1331 ◽  
Author(s):  
J. Anaya ◽  
A. Torres ◽  
V. Hortelano ◽  
J. Jiménez ◽  
A. C. Prieto ◽  
...  
Keyword(s):  
Raman Spectrum ◽  
Si Nanowires ◽  
Phonon Confinement ◽  
Confinement Effects

Size and phonon-confinement effects on low-frequency Raman mode of anatase TiO2 nanocrystal

2005 ◽  
Vol 340 (1-4) ◽  
pp. 220-227 ◽  
Author(s):  
Ke-Rong Zhu ◽  
Ming-Sheng Zhang ◽  
Qiang Chen ◽  
Zhen Yin
Keyword(s):  
Low Frequency ◽  
Anatase Tio2 ◽  
Raman Mode ◽  
Phonon Confinement ◽  
Confinement Effects

Magnetopolaron in a Quantum Well. LO-Phonon Confinement Effects

1990 ◽  
Vol 160 (1) ◽  
pp. 117-125 ◽  
Author(s):  
H. Rücker ◽  
M. Mora-Ramos ◽  
F. Comas
Keyword(s):  
Quantum Well ◽  
Phonon Confinement ◽  
Confinement Effects

Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals

1999 ◽  
Vol 86 (4) ◽  
pp. 1921-1924 ◽  
Author(s):  
V. Paillard ◽  
P. Puech ◽  
M. A. Laguna ◽  
R. Carles ◽  
B. Kohn ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Size Determination ◽  
Phonon Confinement ◽  
Confinement Model
Sign in / Sign up

Export Citation Format

Share Document