scholarly journals Theory of anisotropic magnetoresistance in atomic-sized ferromagnetic metal contacts

2009 ◽  
Vol 79 (14) ◽  
Author(s):  
M. Häfner ◽  
J. K. Viljas ◽  
J. C. Cuevas
Keyword(s):  
Ferromagnetic Metal ◽  
Anisotropic Magnetoresistance ◽  
Metal Contacts

Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

2006 ◽  
Vol 99 (7) ◽  
pp. 073907 ◽  
Author(s):  
N. C. Gerhardt ◽  
S. Hövel ◽  
C. Brenner ◽  
M. R. Hofmann ◽  
F.-Y. Lo ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spin Injection ◽  
Ferromagnetic Metal ◽  
Metal Contacts ◽  
Light Emitting

Magnetoresistive phenomena in nanoscale magnetic contacts

2017 ◽  
Author(s):  
J.D. Burton ◽  
E.Y. Tsymbal
Keyword(s):  
Electrical Transport ◽  
Ballistic Transport ◽  
Spin Valve ◽  
Electrical Current ◽  
Anisotropic Magnetoresistance ◽  
Metal Contacts ◽  
Electrical Transport Properties ◽  
Conductance Quantization ◽  
Spin Polarized ◽  
Inhomogeneous Magnetization

This article examines magnetoresistive phenomena in nano- and atomic-size ferromagnetic metal contacts. In particular, it considers how magnetization affects the flow of electrical current in ferromagnetic materials by focusing on two major categories of magnetoresistive phenomena: the ‘spin-valve’, where the flow of spin-polarized electrical current is affected by an inhomogeneous magnetization profile, and anisotropic magnetoresistance (AMR), which involves the anisotropy of electrical transport properties with respect to the orientation of the magnetization. The article first provides an overview of ballistic transport and conductance quantization before discussing domain-wall magnetoresistance at the nanoscale. It also describes AMR in magnetic nanocontacts as well as tunnelling anisotropic magnetoresistance in broken contacts.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

The Effectі of the Giant and Anisotropic Magnetoresistance: Demonstration and Learning in the Physics Course of High Schools

2018 ◽  
Vol 10 (3) ◽  
pp. 03016-1-03016-8
Author(s):  
V. B. Loboda ◽  
◽  
Yu. O. Shkurdoda ◽  
M. Ya. Dovzhyk ◽  
V. O. Kravchenko ◽  
...  
Keyword(s):  
High Schools ◽  
Anisotropic Magnetoresistance ◽  
Physics Course

Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe2

2021 ◽  
Author(s):  
Rui Zhu ◽  
Zhibin Gao ◽  
Qijie Liang ◽  
Junxiong Hu ◽  
Jian-Sheng Wang ◽  
...  
Keyword(s):  
Anisotropic Magnetoresistance
Sign in / Sign up

Export Citation Format

Share Document