Temperature dependence of anisotropic magnetoresistance and atomic rearrangements in ferromagnetic metal break junctions

2007 ◽  
Vol 76 (18) ◽  
Author(s):  
S.-F. Shi ◽  
K. I. Bolotin ◽  
F. Kuemmeth ◽  
D. C. Ralph
Keyword(s):  
Temperature Dependence ◽  
Ferromagnetic Metal ◽  
Anisotropic Magnetoresistance ◽  
Break Junctions

Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li

2016 ◽  
Vol 108 (11) ◽  
pp. 112404 ◽  
Author(s):  
Shohei Miyakozawa ◽  
Lin Chen ◽  
Fumihiro Matsukura ◽  
Hideo Ohno
Keyword(s):  
Magnetic Anisotropy ◽  
Temperature Dependence ◽  
Anisotropic Magnetoresistance

scholarly journals Temperature dependence of anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

2015 ◽  
Vol 117 (17) ◽  
pp. 17A310 ◽  
Author(s):  
C. Wang ◽  
H. Seinige ◽  
G. Cao ◽  
J.-S. Zhou ◽  
J. B. Goodenough ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Anisotropic Magnetoresistance

TEMPERATURE DEPENDENCE OF GAP RELATED STRUCTURES IN YBa2Cu3O7-δ BREAK JUNCTIONS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 3080-3085 ◽  
Author(s):  
F. GIUBILEO ◽  
F. BOBBA ◽  
A. M. CUCOLO ◽  
A. I. AKIMENKO
Keyword(s):  
Temperature Dependence ◽  
Energy Gap ◽  
Tunneling Current ◽  
Tunnel Barrier ◽  
Break Junction ◽  
Break Junctions ◽  
High Oxygen Pressure ◽  
Superconducting Energy Gap ◽  
Helium Gas ◽  
State Resistance

We have applied the break junction technique to highly epitaxial c-axis oriented YBaCuO thin films with T c (ρ=0)=91 K deposited on (001) SrTiO 3 or LaAlO 3 substrates by a high oxygen pressure d.c. sputtering technique. The film thickness was about 1500 Å and a photolithographic process was used to reduce to 100 μm the junction width across the fracture. By this procedure, tunable resistance break junctions with tunneling current favored along the ab-planes have been realized. The junctions were formed at low temperatures with freshly fractured surfaces and an inert tunnel barrier was created by helium gas or liquid. A good stability was obtained with the normal-state resistance R N changing about 15% in the temperature range between 4.2 K and 100 K. We have measured the temperature dependence of the conductance maxima that are related to superconducting energy gap at the Fermi level.

scholarly journals Temperature dependence of intrinsic and extrinsic contributions to anisotropic magnetoresistance

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ji-Ho Park ◽  
Hye-Won Ko ◽  
Jeong-Mok Kim ◽  
Jungmin Park ◽  
Seung-Young Park ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Time Domain ◽  
Theoretical Research ◽  
Maximum Temperature ◽  
Anisotropic Magnetoresistance ◽  
Permalloy Film ◽  
Terahertz Time Domain Spectroscopy ◽  
Temperature Dependent ◽  
Fundamental Understanding ◽  
Temperature Variable

AbstractElectrical conduction in magnetic materials depends on their magnetization configuration, resulting in various magnetoresistances (MRs). The microscopic mechanisms of MR have so far been attributed to either an intrinsic or extrinsic origin, yet the contribution and temperature dependence of either origin has remained elusive due to experimental limitations. In this study, we independently probed the intrinsic and extrinsic contributions to the anisotropic MR (AMR) of a permalloy film at varying temperatures using temperature-variable terahertz time-domain spectroscopy. The AMR induced by the scattering-independent intrinsic origin was observed to be approximately 1.5% at T = 16 K and is virtually independent of temperature. In contrast, the AMR induced by the scattering-dependent extrinsic contribution was approximately 3% at T = 16 K but decreased to 1.5% at T = 155 K, which is the maximum temperature at which the AMR can be resolved using THz measurements. Our results experimentally quantify the temperature-dependent intrinsic and extrinsic contributions to AMR, which can stimulate further theoretical research to aid the fundamental understanding of AMR.

Temperature Dependence of the Anisotropic Magnetoresistance of the Metallic Antiferromagnet Fe2As

2021 ◽  
Vol 15 (5) ◽  
Author(s):  
Junyi Wu ◽  
Manohar H. Karigerasi ◽  
Daniel P. Shoemaker ◽  
Virginia O. Lorenz ◽  
David G. Cahill
Keyword(s):  
Temperature Dependence ◽  
Anisotropic Magnetoresistance
Sign in / Sign up

Export Citation Format

Share Document