scholarly journals Temperature dependence of anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

2015 ◽  
Vol 117 (17) ◽  
pp. 17A310 ◽  
Author(s):  
C. Wang ◽  
H. Seinige ◽  
G. Cao ◽  
J.-S. Zhou ◽  
J. B. Goodenough ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Anisotropic Magnetoresistance

Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li

2016 ◽  
Vol 108 (11) ◽  
pp. 112404 ◽  
Author(s):  
Shohei Miyakozawa ◽  
Lin Chen ◽  
Fumihiro Matsukura ◽  
Hideo Ohno
Keyword(s):  
Magnetic Anisotropy ◽  
Temperature Dependence ◽  
Anisotropic Magnetoresistance

scholarly journals Temperature dependence of intrinsic and extrinsic contributions to anisotropic magnetoresistance

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ji-Ho Park ◽  
Hye-Won Ko ◽  
Jeong-Mok Kim ◽  
Jungmin Park ◽  
Seung-Young Park ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Time Domain ◽  
Theoretical Research ◽  
Maximum Temperature ◽  
Anisotropic Magnetoresistance ◽  
Permalloy Film ◽  
Terahertz Time Domain Spectroscopy ◽  
Temperature Dependent ◽  
Fundamental Understanding ◽  
Temperature Variable

AbstractElectrical conduction in magnetic materials depends on their magnetization configuration, resulting in various magnetoresistances (MRs). The microscopic mechanisms of MR have so far been attributed to either an intrinsic or extrinsic origin, yet the contribution and temperature dependence of either origin has remained elusive due to experimental limitations. In this study, we independently probed the intrinsic and extrinsic contributions to the anisotropic MR (AMR) of a permalloy film at varying temperatures using temperature-variable terahertz time-domain spectroscopy. The AMR induced by the scattering-independent intrinsic origin was observed to be approximately 1.5% at T = 16 K and is virtually independent of temperature. In contrast, the AMR induced by the scattering-dependent extrinsic contribution was approximately 3% at T = 16 K but decreased to 1.5% at T = 155 K, which is the maximum temperature at which the AMR can be resolved using THz measurements. Our results experimentally quantify the temperature-dependent intrinsic and extrinsic contributions to AMR, which can stimulate further theoretical research to aid the fundamental understanding of AMR.

Temperature Dependence of the Anisotropic Magnetoresistance of the Metallic Antiferromagnet Fe2As

2021 ◽  
Vol 15 (5) ◽  
Author(s):  
Junyi Wu ◽  
Manohar H. Karigerasi ◽  
Daniel P. Shoemaker ◽  
Virginia O. Lorenz ◽  
David G. Cahill
Keyword(s):  
Temperature Dependence ◽  
Anisotropic Magnetoresistance

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Magnetic Domains and Wall Structures

1972 ◽  
Vol 30 ◽  
pp. 496-497
Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa
Keyword(s):  
Temperature Dependence ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Iron Film ◽  
Objective Lens ◽  
Lorentz Microscopy ◽  
Domain Structures ◽  
Wall Structures ◽  
Crystal Films ◽  
Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

Temperature dependence of generation-recombination noise in p-n junctions

2002 ◽  
Vol 12 (3) ◽  
pp. 71-74
Author(s):  
J. A. Jiménez Tejada ◽  
A. Godoy ◽  
A. Palma ◽  
P. Cartujo
Keyword(s):  
Temperature Dependence
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