Formation of self-organized nanoscale porous structures in anodic aluminum oxide

2006 ◽  
Vol 73 (20) ◽  
Author(s):  
G. K. Singh ◽  
A. A. Golovin ◽  
I. S. Aranson
2009 ◽  
Vol 54 (6) ◽  
pp. 2415-2419 ◽  
Author(s):  
VanChiem Chu ◽  
Huiting Li ◽  
Hidong Kim ◽  
JaeM. Seo

2014 ◽  
Vol 941-944 ◽  
pp. 1271-1274
Author(s):  
Di Ma ◽  
Shu Bai Li ◽  
Long Gui Xu ◽  
Xin Yan Dong ◽  
Xiu Ying Hu

The surface of porous anodic aluminum oxide (AAO) film anodizing in malonic acid, which is characterized by Scanning Electron Microscope (SEM) and ImageJ software. There are disorderly tiny pores or stripes on the first once anodizing surface. Pore diameter, pore density and porosity are decided by the first anodizing process. With anodizing step increased, pore diameter of the membrane decreased. Two-step anodization improves the order of PAA membrane greatly, which is processed on the basic of the ordered array pits at the aluminum that is observed after removing membrane of the one-step anodization. According to the experiments, porous anodic aluminum oxide (PAA) was prepared in 1.0 mol/L malonic acid, its pore diameter increased and porosity decreased with anodizing voltage increased.


2004 ◽  
Vol 854 ◽  
Author(s):  
Patrick J. Griffin ◽  
Robert W. Carpick ◽  
Donald S. Stone

ABSTRACTAnodic aluminum oxide (AAO) has long been considered a viable material for templated growth of nanomaterials for electronic, magnetic and optical applications due to the ability to form self-organized, high aspect-ratio nanochannels. More recently these porous materials have been incorporated with silicon to create a template for nanostructured materials on a semiconducting substrate. However, there has been no investigation into how pore growth is affected by confining the pre-anodized aluminum dimensions to the nanometer scale. We have used electron beam lithography to pattern 200 nm thick aluminum structures on Si with lateral features ranging from 100 nm to several microns in size. Structures consisting of 1 – 10 individual pores 10 – 15 nm in diameter are routinely fabricated. Confinement effects in the narrowest features assist in pore ordering in the porous structures without the use of pre-patterning or a two step anodization.


2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Guo Kuo ◽  
Yuan-Tai Hsieh ◽  
Cheng-Fu Yang ◽  
Ching-Ho Huang ◽  
Chia-Ying Yen

A two-step electrochemical anodization was used to form the anodic aluminum oxide (AAO) thin films with nanotube arrays of self-organized honeycomb structure. Al foil was anodized in 10% sulfuric acid (H2SO4) and 3% oxalic acid (H2C2O4) at 25°C at constant voltage of 40 V for 60 min for two times. Ethylene glycol (C2H6O2) was used as a solution and 0.3 M potassium iodide (KI) was used to improve the solution’s conductivity. Different electrolyte concentrations of Bi(NO3)3-5H2O, SbCl3, and TeCl4were added into KI-C2H6O2solution and the cyclic voltammetry experiment was used to find the reduced voltages of Bi3+, Sb3+, and Te4+ions. The potentiostatic deposition and pulse electrodeposition (PED) processes were used to deposit the (Bi,Sb)2−xTe3+x-based materials. Field-emission scanning electron microscope and energy dispersive spectrometers were used to analyze the compositions of the deposited (Bi,Sb)2−xTe3+x-based materials. After finding the optimal deposition parameter of the PED process the AAO nanotube arrays were used as the templates to deposit the (Bi,Sb)2−xTe3+x-based thermoelectric nanowires.


2012 ◽  
Vol 1411 ◽  
Author(s):  
Wei Guan ◽  
Jay Ghatak ◽  
Nianhua Peng ◽  
Yong Peng ◽  
Chris Jeynes ◽  
...  

ABSTRACTPenetration of a nanochannel mask by 190keV Co+ ions is tested for the purpose of achieving laterally modulated ion implantation into a SiO2 thin film on a Si substrate. A 2D-nanoporous membrane of anodic aluminum oxide (AAO) is chosen as the mask. Criteria and challenges for designing the mask are presented. Implantation experiments through a mask with pore diameter of 125 nm and inter-pore distance of 260 nm are carried out. Cross-sectional TEM (XTEM) is shown as an ideal tool to assess depth distribution and lateral distribution of implanted ions at the same time, complemented by Rutherford backscattering spectroscopy. Using energy dispersive x-ray spectroscopy linescans, a Co distribution with lateral modulation is found at 120 nm below the oxide surface. First experiments in converting the atomic distribution of Co to discrete nanoparticles by in-situ TEM annealing are presented.


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