Electronic and crystalline structure, morphology, and magnetism of nanometricFe2O3layers deposited on Pt(111) by atomic-oxygen-assisted molecular beam epitaxy

2005 ◽  
Vol 72 (24) ◽  
Author(s):  
A. Barbier ◽  
R. Belkhou ◽  
P. Ohresser ◽  
M. Gautier-Soyer ◽  
O. Bezencenet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Crystalline Structure ◽  
Atomic Oxygen ◽  
Molecular Beam ◽  
Structure Morphology

A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
M. Touzeau ◽  
A. Schuhl ◽  
R. Cabanel ◽  
P. Luzeau ◽  
A. Barski ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
High Temperature Superconductors ◽  
Plasma Source ◽  
Plasma Discharge

AbstractWe describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.

scholarly journals Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии

2019 ◽  
Vol 53 (7) ◽  
pp. 1010
Author(s):  
П.В. Середин ◽  
А.С. Леньшин ◽  
Д.С. Золотухин ◽  
Д.Л. Голощапов ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Molecular Beam ◽  
Diameter Distribution ◽  
Structure Morphology ◽  
Nanoporous Si ◽  
Pl Intensity

This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.

scholarly journals Surface composition of BaTiO3/SrTiO3(001) films grown by atomic oxygen plasma assisted molecular beam epitaxy

2012 ◽  
Vol 112 (11) ◽  
pp. 114116 ◽  
Author(s):  
A. Barbier ◽  
C. Mocuta ◽  
D. Stanescu ◽  
P. Jegou ◽  
N. Jedrecy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Surface Composition

Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy

2004 ◽  
Vol 85 (1) ◽  
pp. 85-87 ◽  
Author(s):  
Z. J. Yan ◽  
R. Xu ◽  
Y. Y. Wang ◽  
S. Chen ◽  
Y. L. Fan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Molecular Beam

Single crystalline Tm2O3 films grown on Si (001) by atomic oxygen assisted molecular beam epitaxy

2011 ◽  
Vol 321 (1) ◽  
pp. 171-175 ◽  
Author(s):  
T. Ji ◽  
J. Cui ◽  
Z.B. Fang ◽  
T.X. Nie ◽  
Y.L. Fan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Molecular Beam ◽  
Single Crystalline

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

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