Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

2013 ◽  
Vol 114 (9) ◽  
pp. 094306 ◽  
Author(s):  
A. Maryński ◽  
G. Sęk ◽  
A. Musiał ◽  
J. Andrzejewski ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Structure Morphology ◽  
Inas Quantum Dot ◽  
Inp Substrates

Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy

2012 ◽  
Vol 9 (7) ◽  
pp. 1534-1536 ◽  
Author(s):  
Ong-arj Tangmettajittakul ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Molecules ◽  
Self Assembled ◽  
Inas Quantum Dot

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb 2 and As 2 fluxes

2008 ◽  
Author(s):  
P. J. Carrington ◽  
V. A. Solov'ev ◽  
Q. Zhuang ◽  
S. V. Ivanov ◽  
A. Krier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Type Ii ◽  
Inas Quantum Dot

scholarly journals Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии

2019 ◽  
Vol 53 (7) ◽  
pp. 1010
Author(s):  
П.В. Середин ◽  
А.С. Леньшин ◽  
Д.С. Золотухин ◽  
Д.Л. Голощапов ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Molecular Beam ◽  
Diameter Distribution ◽  
Structure Morphology ◽  
Nanoporous Si ◽  
Pl Intensity

This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.

scholarly journals Single-photon emission in telecommunication band from an InAs quantum dot grown on InP with molecular-beam epitaxy

2013 ◽  
Vol 103 (6) ◽  
pp. 061114 ◽  
Author(s):  
X. Liu ◽  
K. Akahane ◽  
N. A. Jahan ◽  
N. Kobayashi ◽  
M. Sasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Inas Quantum Dot
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