scholarly journals Surface composition of BaTiO3/SrTiO3(001) films grown by atomic oxygen plasma assisted molecular beam epitaxy

2012 ◽  
Vol 112 (11) ◽  
pp. 114116 ◽  
Author(s):  
A. Barbier ◽  
C. Mocuta ◽  
D. Stanescu ◽  
P. Jegou ◽  
N. Jedrecy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Surface Composition

A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
M. Touzeau ◽  
A. Schuhl ◽  
R. Cabanel ◽  
P. Luzeau ◽  
A. Barski ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
High Temperature Superconductors ◽  
Plasma Source ◽  
Plasma Discharge

AbstractWe describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.

Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by Molecular Beam Epitaxy

2014 ◽  
Vol 584 ◽  
pp. 327-330 ◽  
Author(s):  
R. Casey Boutwell ◽  
M. Wei ◽  
Matthieu Baudelet ◽  
Winston V. Schoenfeld
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxygen Plasma ◽  
Molecular Beam

Structure and surface morphology of highly conductive RuO2 films grown on MgO by oxygen-plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 1844-1849 ◽  
Author(s):  
Y. Gao ◽  
G. Bai ◽  
Y. Liang ◽  
G. C. Dunham ◽  
S. A. Chambers
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Epitaxial Films ◽  
Low Resistivity ◽  
Small Grains

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 °C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure. The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of ∼ 36 μΩ-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 μΩ-cm) was found for the RuO2 (110) textured films grown on MgO(110).

Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 310 (10) ◽  
pp. 2450-2456 ◽  
Author(s):  
Z.Q. Yu ◽  
Satyanarayana V.N.T. Kuchibhatla ◽  
M.H. Engelhard ◽  
V. Shutthanandan ◽  
C.M. Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxygen Plasma ◽  
Molecular Beam

Epitaxial Growth and Characterization of NbxTi1−xO2 Rutile Films by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

1995 ◽  
Vol 401 ◽  
Author(s):  
Y. Gao ◽  
S. A. Chambers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Atomic Force

AbstractEpitaxial films of NbxTi1−xO2 rutile were grown on TiO2 (110) and (100) at 600 °C by oxygen-plasma-assisted molecular beam epitaxy using elemental Ti and Nb sources. The epitaxial films were characterized by means of reflection high-energy and low-energy electron diffraction (RHEED/LEED), x-ray photoelectron spectroscopy and diffraction (XPS/XPD), ultraviolet photoemission spectroscopy (UPS) and atomic force microscopy (AFM). The epitaxial films grow in a layer-by-layer fashion and have excellent short- and long-range structure order at x≤0.3 on TiO2(110) and at x≤0.15 on TiO2(100). However, the epitaxial films become rough and disorder at higher doping levels. Nb substitutionally incorporates at cation lattice sites, leading to NbxTi1−xO2 solid solutions. In addition, the oxidation state of Nb in the NbxTi1−xO2 films has been determined to be +4.

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