Charge dynamics and Kondo effect in single-electron traps in field-effect transistors

I. Martin; D. Mozyrsky

doi:10.1103/physrevb.71.165115

Charge dynamics and Kondo effect in single-electron traps in field-effect transistors

Physical Review B ◽

10.1103/physrevb.71.165115 ◽

2005 ◽

Vol 71 (16) ◽

Cited By ~ 3

Author(s):

I. Martin ◽

D. Mozyrsky

Keyword(s):

Field Effect ◽

Kondo Effect ◽

Field Effect Transistors ◽

Single Electron ◽

Electron Traps ◽

Charge Dynamics

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Effects of Strong Correlations in Single Electron Traps in Field-Effect Transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2004.840162 ◽

2005 ◽

Vol 4 (1) ◽

pp. 90-95 ◽

Cited By ~ 1

Author(s):

D. Mozyrsky ◽

I. Martin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Single Electron ◽

Strong Correlations ◽

Electron Traps

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Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3589373 ◽

2011 ◽

Vol 98 (19) ◽

pp. 193502 ◽

Cited By ~ 10

Author(s):

Katsuhiko Nishiguchi ◽

Yukinori Ono ◽

Akira Fujiwara

Keyword(s):

Metal Oxide ◽

Shot Noise ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Electron Counting ◽

Counting Statistics

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Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection

Applied Physics Letters ◽

10.1063/1.4928656 ◽

2015 ◽

Vol 107 (7) ◽

pp. 073110 ◽

Cited By ~ 17

Author(s):

Kensaku Chida ◽

Katsuhiko Nishiguchi ◽

Gento Yamahata ◽

Hirotaka Tanaka ◽

Akira Fujiwara

Keyword(s):

Feedback Control ◽

Field Effect ◽

Thermal Noise ◽

Noise Suppression ◽

Field Effect Transistors ◽

Single Electron ◽

Nano Scale ◽

Electron Detection

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Evaluation of the Coulomb energy for single‐electron interface trapping in sub‐μm metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.356194 ◽

1994 ◽

Vol 75 (6) ◽

pp. 2970-2979 ◽

Cited By ~ 39

Author(s):

H. H. Mueller ◽

D. Wörle ◽

M. Schulz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Coulomb Energy

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Experimental Observation of Quantum Confinement Effect in and Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.104001 ◽

2013 ◽

Vol 52 (10R) ◽

pp. 104001 ◽

Cited By ~ 1

Author(s):

Ryota Suzuki ◽

Motoki Nozue ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Experimental Observation ◽

Quantum Confinement ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Quantum Confinement Effect ◽

Silicon Nanowire ◽

Confinement Effect ◽

Single Electron ◽

Electron Hole

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Conductance modulation of submicrometer metal–oxide–semiconductor field-effect transistors by single-electron trapping

Journal of Applied Physics ◽

10.1063/1.361785 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4178 ◽

Cited By ~ 42

Author(s):

H. H. Mueller ◽

M. Schulz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Conductance Modulation

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Estimation of electron traps in carbon-60 field-effect transistors by a thermally stimulated current technique

Applied Physics Letters ◽

10.1063/1.2779240 ◽

2007 ◽

Vol 91 (10) ◽

pp. 103505 ◽

Cited By ~ 48

Author(s):

Toshinori Matsushima ◽

Masayuki Yahiro ◽

Chihaya Adachi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Thermally Stimulated Current ◽

Electron Traps ◽

Current Technique

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Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2003.817230 ◽

2003 ◽

Vol 2 (3) ◽

pp. 144-148 ◽

Cited By ~ 29

Author(s):

F. Boeuf ◽

X. Jehl ◽

M. Sanquer ◽

T. Skotnicki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Single Electron ◽

Electron Effects

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Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3257 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3257-3263 ◽

Cited By ~ 29

Author(s):

Akira Fujiwara ◽

Yasuo Takahashi ◽

Hideo Namatsu ◽

Kenji Kurihara ◽

Katsumi Murase

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistors ◽

Electron Transistors

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Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature

Nanotechnology ◽

10.1088/0957-4484/20/17/175201 ◽

2009 ◽

Vol 20 (17) ◽

pp. 175201 ◽

Cited By ~ 17

Author(s):

K Nishiguchi ◽

A Fujiwara

Keyword(s):

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Single Electron ◽

Electron Counting ◽

Counting Statistics

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