Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection

Kensaku Chida; Katsuhiko Nishiguchi; Gento Yamahata; Hirotaka Tanaka; Akira Fujiwara

doi:10.1063/1.4928656

Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection

Applied Physics Letters ◽

10.1063/1.4928656 ◽

2015 ◽

Vol 107 (7) ◽

pp. 073110 ◽

Cited By ~ 17

Author(s):

Kensaku Chida ◽

Katsuhiko Nishiguchi ◽

Gento Yamahata ◽

Hirotaka Tanaka ◽

Akira Fujiwara

Keyword(s):

Feedback Control ◽

Field Effect ◽

Thermal Noise ◽

Noise Suppression ◽

Field Effect Transistors ◽

Single Electron ◽

Nano Scale ◽

Electron Detection

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Thermal-Noise Suppression in Nanometer-Scale Si Field-Effect Transistors by Feedback Control with Single-Electron Resolution

10.7567/ssdm.2014.h-7-1 ◽

2014 ◽

Author(s):

K. Chida ◽

K. Nishiguchi ◽

G. Yamahata ◽

A. Fujiwara

Keyword(s):

Feedback Control ◽

Field Effect ◽

Thermal Noise ◽

Noise Suppression ◽

Field Effect Transistors ◽

Single Electron ◽

Nanometer Scale

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Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3589373 ◽

2011 ◽

Vol 98 (19) ◽

pp. 193502 ◽

Cited By ~ 10

Author(s):

Katsuhiko Nishiguchi ◽

Yukinori Ono ◽

Akira Fujiwara

Keyword(s):

Metal Oxide ◽

Shot Noise ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Electron Counting ◽

Counting Statistics

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On the influence of hot carrier effects on the thermal noise of field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1970.17087 ◽

1970 ◽

Vol 17 (10) ◽

pp. 858-862 ◽

Cited By ~ 29

Author(s):

F.M. Klaassen

Keyword(s):

Field Effect ◽

Thermal Noise ◽

Field Effect Transistors ◽

Hot Carrier ◽

Hot Carrier Effects

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Effect of the bulk charge on the thermal noise in metal-oxide-silicon field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1965.15594 ◽

1965 ◽

Vol 12 (9) ◽

pp. 509-509

Author(s):

C.T. Sah ◽

F.H. Hielscher ◽

S.Y. Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Thermal Noise ◽

Field Effect Transistors ◽

Bulk Charge ◽

Metal Oxide Silicon

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Co-Integration of Nano-Scale Vertical- and Horizontal-Channel Metal-Oxide-Semiconductor Field-Effect Transistors for Low Power CMOS Technology

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.6226 ◽

2012 ◽

Vol 12 (7) ◽

pp. 5313-5317

Author(s):

Min-Chul Sun ◽

Garam Kim ◽

Sang Wan Kim ◽

Hyun Woo Kim ◽

Hyungjin Kim ◽

...

Keyword(s):

Metal Oxide ◽

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Cmos Technology ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Horizontal Channel ◽

Nano Scale ◽

Low Power Cmos

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Thermal noise in field-effect transistors

Proceedings of the IEEE ◽

10.1109/proc.1966.4882 ◽

1966 ◽

Vol 54 (5) ◽

pp. 817-817

Author(s):

F.N. Trofimenkoff

Keyword(s):

Field Effect ◽

Thermal Noise ◽

Field Effect Transistors

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Evaluation of the Coulomb energy for single‐electron interface trapping in sub‐μm metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.356194 ◽

1994 ◽

Vol 75 (6) ◽

pp. 2970-2979 ◽

Cited By ~ 39

Author(s):

H. H. Mueller ◽

D. Wörle ◽

M. Schulz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Coulomb Energy

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Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1986.22680 ◽

1986 ◽

Vol 33 (9) ◽

pp. 1395-1397 ◽

Cited By ~ 54

Author(s):

R.P. Jindal

Keyword(s):

Field Effect ◽

Thermal Noise ◽

Field Effect Transistors ◽

Hot Electron ◽

Fine Line ◽

Electron Effects

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Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.7222 ◽

1999 ◽

Vol 38 (Part 1, No. 12B) ◽

pp. 7222-7226 ◽

Cited By ~ 1

Author(s):

Hiroki Kondo ◽

Kenta Izumikawa ◽

Masakazu Sakurai ◽

Shin-ichi Baba ◽

Hirotaka Iwano ◽

...

Keyword(s):

Metal Oxide ◽

Coulomb Blockade ◽

Field Effect ◽

Focused Ion Beam ◽

Field Effect Transistors ◽

Ion Beam ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nano Scale ◽

Ion Beam Implantation

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Experimental Observation of Quantum Confinement Effect in and Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.104001 ◽

2013 ◽

Vol 52 (10R) ◽

pp. 104001 ◽

Cited By ~ 1

Author(s):

Ryota Suzuki ◽

Motoki Nozue ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Experimental Observation ◽

Quantum Confinement ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Quantum Confinement Effect ◽

Silicon Nanowire ◽

Confinement Effect ◽

Single Electron ◽

Electron Hole

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