scholarly journals Effect of interwall surface roughness correlations on optical spectra of quantum well excitons

2005 ◽  
Vol 71 (15) ◽  
Author(s):  
I. V. Ponomarev ◽  
L. I. Deych ◽  
A. A. Lisyansky
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Optical Spectra

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon

2019 ◽  
Vol 954 ◽  
pp. 51-59
Author(s):  
Xi Duo Hu ◽  
Cheng Ming Li ◽  
Shao Yan Yang
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Electron Mobility ◽  
Atomic Scale ◽  
Free Standing ◽  
Poisson Equations ◽  
Surface Roughness Scattering ◽  
Calculation Results ◽  
Roughness Amplitude ◽  
Dimensional Electron Gas

Abstract:Electron mobility limited by surface roughness scattering in free-standing GaAs thin ribbon with an internal parabolic quantum well caused by surface state is investigated in detail. Based on analyzing the parabolic quantum well including the energy subband level, wave function and the confined potential profile in the thin ribbon by solving Schrödinger and Poisson equations self-consistently, the electron mobility could be investigated. Conclusion indicates that remote surface roughness (RSR) of the thin ribbon will change the two dimensional electron gas (2DEG) mobility through the medium of barrier height fluctuation of the parabolic well in atomic scale. Calculation results reveal that the 2DEG mobility decreases with increasing roughness amplitude, which is characterized in terms of the surface roughness height and the roughness lateral size.

Quantitative Hrtem: Measuring Projected Potential, Surface Roughness and Chemical Composition

1994 ◽  
Vol 332 ◽  
Author(s):  
P. Schwander ◽  
C. Kisielowski ◽  
F.H. Baumann ◽  
Y.O. Kim ◽  
A. Ourmazd
Keyword(s):  
Surface Roughness ◽  
Chemical Composition ◽  
Quantum Well ◽  
Cross Section ◽  
Potential Surface ◽  
Atomic Level ◽  
Topographic Map ◽  
Plan View ◽  
Lattice Images ◽  
Imaging Conditions

ABSTRACTWe describe how general lattice images may be used to measure the variation of the potential in crystalline solids in any projection, with no knowledge of the imaging conditions. This approach is applicable to structurally perfect samples, in which interfacial topography, or changes in composition are of interest. We present the first atomic-level topographic map of a Si/SiO2 interface in plan-view, and the first microscopic compositional map of a Si/GeSi/Si quantum well in cross-section.

Carrier-induced shift and broadening of optical spectra in anAlxGa1−xAs/GaAs quantum well with a gate electrode

1988 ◽  
Vol 38 (15) ◽  
pp. 10791-10797 ◽  
Author(s):  
H. Yoshimura ◽  
G. E. W. Bauer ◽  
H. Sakaki
Keyword(s):  
Quantum Well ◽  
Optical Spectra ◽  
Gate Electrode

An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs

2016 ◽  
Vol 63 (6) ◽  
pp. 2306-2312 ◽  
Author(s):  
Oves Badami ◽  
Enrico Caruso ◽  
Daniel Lizzit ◽  
Patrik Osgnach ◽  
David Esseni ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Thin Body ◽  
Scattering Model ◽  
Surface Roughness Scattering

scholarly journals The scattering time of electrons in a GaAs/InGaAs/GaAs quantum well including temperature and exchange-correlation effects

2020 ◽  
Vol 3 (3) ◽  
Author(s):  
Truong Van Tuan ◽  
Nguyen Quoc Khanh ◽  
Vo Van Tai
Keyword(s):  
Surface Roughness ◽  
Relaxation Time ◽  
Quantum Well ◽  
Impurity Scattering ◽  
Correlation Effects ◽  
Charged Impurity ◽  
Exchange Correlation ◽  
Local Field Correction ◽  
Quantum Well Width ◽  
Charged Impurity Scattering

The ratio of the scattering and single-particle relaxation time of a quasi-two-dimensional electron gas (Q2DEG) in a finite lattice-mismatched GaAs/InGaAs/GaAs quantum well was investigate at zero and finite temperatures, taking into account the exchange-correlation effects via a local-field correction with three approximations for the LFC, G = 0, GH, and GGA. We studied the dependence of the surface roughness, roughness-induced piezoelectric, remote and homogenous background charged impurity scattering on the carrier density and quantum well width. In the case of zero temperature and Hubbard local-field correction our results reduced to those of different theoretical calculations. At low density, the exchange-correlation effects depend strongly on the ratio τt/τs. While at high density many-body effects due to exchange and correlation considerably modified the ratio of the scattering and single-particle relaxation time. We found that, for densities and temperatures considered T = 0,3TF in this study, the temperature affected weakly on the time ratio for four scatterings. Furthermore, with the change of quantum well width, the effect of LFC and temperatures act on the ratio τt/τs are negligible for the roughness-induced piezoelectric and remote charged impurity scattering, and are notable for the surface roughness and homogenous background charged impurity scattering.

Electron-density-dependent optical spectra of a remotely-doped GaAs/Al0.33Ga0.67As single quantum well

1994 ◽  
Vol 15 (3) ◽  
pp. 355 ◽  
Author(s):  
A.J. Shields ◽  
C.L. Foden ◽  
M. Pepper ◽  
D.A. Ritchie ◽  
M.P. Grimshaw ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Density ◽  
Optical Spectra ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Density Dependent
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