An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs

2016 ◽  
Vol 63 (6) ◽  
pp. 2306-2312 ◽  
Author(s):  
Oves Badami ◽  
Enrico Caruso ◽  
Daniel Lizzit ◽  
Patrik Osgnach ◽  
David Esseni ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Thin Body ◽  
Scattering Model ◽  
Surface Roughness Scattering

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon

2019 ◽  
Vol 954 ◽  
pp. 51-59
Author(s):  
Xi Duo Hu ◽  
Cheng Ming Li ◽  
Shao Yan Yang
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Electron Mobility ◽  
Atomic Scale ◽  
Free Standing ◽  
Poisson Equations ◽  
Surface Roughness Scattering ◽  
Calculation Results ◽  
Roughness Amplitude ◽  
Dimensional Electron Gas

Abstract:Electron mobility limited by surface roughness scattering in free-standing GaAs thin ribbon with an internal parabolic quantum well caused by surface state is investigated in detail. Based on analyzing the parabolic quantum well including the energy subband level, wave function and the confined potential profile in the thin ribbon by solving Schrödinger and Poisson equations self-consistently, the electron mobility could be investigated. Conclusion indicates that remote surface roughness (RSR) of the thin ribbon will change the two dimensional electron gas (2DEG) mobility through the medium of barrier height fluctuation of the parabolic well in atomic scale. Calculation results reveal that the 2DEG mobility decreases with increasing roughness amplitude, which is characterized in terms of the surface roughness height and the roughness lateral size.

Surface roughness scattering model for arbitrarily oriented silicon nanowires

2011 ◽  
Vol 110 (8) ◽  
pp. 084514 ◽  
Author(s):  
Isabel M. Tienda-Luna ◽  
F. G. Ruiz ◽  
A. Godoy ◽  
B. Biel ◽  
F. Gámiz
Keyword(s):  
Surface Roughness ◽  
Silicon Nanowires ◽  
Scattering Model ◽  
Surface Roughness Scattering

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

2020 ◽  
Vol 59 (3) ◽  
pp. 034002 ◽  
Author(s):  
Jiahui Duan ◽  
Jinjuan Xiang ◽  
Lixing Zhou ◽  
Xiaolei Wang ◽  
Xueli Ma ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Nanowires ◽  
Electron Mobility ◽  
Scattering Model ◽  
Surface Roughness Scattering ◽  
Nonlinear Surface

Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 1101-1104 ◽  
Author(s):  
M.G. Jaikumar ◽  
Shreepad Karmalkar
Keyword(s):  
Surface Roughness ◽  
Measured Data ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Material Parameters ◽  
Velocity Saturation ◽  
Physical Mechanisms ◽  
Surface Roughness Scattering ◽  
Wide Range ◽  
Tcad Simulation

4H-Silicon Carbide VDMOSFET is simulated using the Sentaurus TCAD package of Synopsys. The simulator is calibrated against measured data for a wide range of bias conditions and temperature. Material parameters of 4H-SiC are taken from literature and used in the available silicon models of the simulator. The empirical parameters are adjusted to get a good fit between the simulated curves and measured data. The simulation incorporates the bias and temperature dependence of important physical mechanisms like interface trap density, coulombic interface trap scattering, surface roughness scattering and velocity saturation.

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