Thickness dependence of anomalous magnetic behavior in epitaxial Fe3O4(111) thin films: Effect of density of antiphase boundaries

2004 ◽  
Vol 70 (17) ◽  
Author(s):  
J.-B. Moussy ◽  
S. Gota ◽  
A. Bataille ◽  
M.-J. Guittet ◽  
M. Gautier-Soyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Behavior ◽  
Thickness Dependence ◽  
Antiphase Boundaries

Epitaxial Growth and Magnetic Behavior of (Ni,Zn)Fe2O4 Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application

2002 ◽  
Vol 747 ◽  
Author(s):  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Remanent Magnetization ◽  
Zinc Ferrite ◽  
Lattice Mismatch ◽  
Magnetic Behavior ◽  
Buffer Layers ◽  
Si Substrate ◽  
Antiphase Boundaries ◽  
Nickel Zinc

ABSTRACTEpitaxial nickel zinc ferrite (Ni,Zn)Fe2O4 (NZF) thin films were successfully deposited on (MgO-Al2O3)/CeO2/YSZ/Si(001) substrates, where (MgO-Al2O3) is MgO doped with Al2O3. The crystallographic orientation and magnetic properties (saturation magnetization: Ms, and squareness: Mr/Ms where Mr is remanent magnetization) of NZF thin films were considerably changed with the amount of Al2O3 addition. If the amount of Al2O3 addition was less than 7 mol%, (001)-oriented epitaxial NZF thin films were obtained and the films had low squareness (around 45%). If the amount of Al2O3 addition was more than 7 mol%, (111)-oriented epitaxial NZF thin films were obtained and the films had high squareness (around 60–81%). Maximum squareness (81%) was obtained if the amount of Al2O3 addition was 26 mol%. For the sample with this Al2O3 content, the lattice mismatch between NZF and (MgO-Al2O3) buffer layer was 3.2%. The fact that high squareness was not obtained if lattice mismatch was very small (-0.3% on MgO) but obtained if lattice mismatch was 3.2% suggests that lattice mismatch to a certain content is important to avoid the formation of antiphase boundaries (APBs). This consideration was confirmed by examining other buffer layers having various lattice mismatches with NZF.

Magnetic behavior and thickness dependence in Co-doped BaTiO3 thin films

2008 ◽  
Vol 92 (11) ◽  
pp. 112501 ◽  
Author(s):  
Yuan-Hua Lin ◽  
Songyin Zhang ◽  
Chaoyong Deng ◽  
Yi Zhang ◽  
Xiaohui Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Behavior ◽  
Thickness Dependence ◽  
Co Doped

THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-177-C6-177
Author(s):  
J. YUAN ◽  
S. BERGER ◽  
L. M. BROWN
Keyword(s):  
Thin Films ◽  
Thickness Dependence

The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

2011 ◽  
Vol 406 (23) ◽  
pp. 4436-4439 ◽  
Author(s):  
G. Bai ◽  
R. Li ◽  
H.N. Xu ◽  
Y.D. Xia ◽  
Z.G. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallization Behavior ◽  
Thickness Dependence

Acclimating the magnetic behavior of highly (117) oriented Bi4Ti 3-xMnxO12 thin films prepared sol-gel spin coating method

2020 ◽  
Author(s):  
A. Amali Roselin ◽  
N. Anandhan ◽  
I. Joseph Paneer Doss ◽  
G. Gopu ◽  
K. P. Ganesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Magnetic Behavior ◽  
Spin Coating Method ◽  
Coating Method

Thickness dependence of the properties of epitaxial barium strontium titanate thin films

2015 ◽  
Vol 57 (8) ◽  
pp. 1529-1534 ◽  
Author(s):  
V. B. Shirokov ◽  
Yu. I. Golovko ◽  
V. M. Mukhortov ◽  
Yu. I. Yuzyuk ◽  
P. E. Janolin ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Thickness Dependence ◽  
Barium Strontium

Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Large Change ◽  
Thickness Dependence ◽  
Dielectric Measurement ◽  
Switching Speed ◽  
Wide Range ◽  
Poly Vinylidene Fluoride ◽  
Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

Thickness Dependence and Enhancement of $H_{{\rm C}1}$ in Epitaxial $\hbox{MgB}_{2}$ Thin Films

2013 ◽  
Vol 23 (3) ◽  
pp. 7500604-7500604 ◽  
Author(s):  
D. B. Beringer ◽  
C. Clavero ◽  
T. Tan ◽  
X. X. Xi ◽  
W. M. Roach ◽  
...  
Keyword(s):  
Thin Films ◽  
Thickness Dependence

Room-temperature preparation and magnetic behavior of Co2MnSi thin films

2003 ◽  
Vol 93 (10) ◽  
pp. 7945-7947 ◽  
Author(s):  
S. Kämmerer ◽  
S. Heitmann ◽  
D. Meyners ◽  
D. Sudfeld ◽  
A. Thomas ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behavior ◽  
Temperature Preparation
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