Room-temperature preparation and magnetic behavior of Co2MnSi thin films

2003 ◽  
Vol 93 (10) ◽  
pp. 7945-7947 ◽  
Author(s):  
S. Kämmerer ◽  
S. Heitmann ◽  
D. Meyners ◽  
D. Sudfeld ◽  
A. Thomas ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behavior ◽  
Temperature Preparation

Room-temperature preparation of crystalline TiO2 thin films and their applications in polymer/TiO2 hybrid optoelectronic devices

2011 ◽  
Vol 12 (6) ◽  
pp. 1073-1079 ◽  
Author(s):  
Chung-Han Wu ◽  
Hanying Li ◽  
Hon Hang Fong ◽  
Vladimir A. Pozdin ◽  
Lara A. Estroff ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Tio2 Thin Films ◽  
Temperature Preparation

Room Temperature Preparation of Ba1-xCaxMoO4 Solid Solution Thin Films by Galvanic Cell Method

2017 ◽  
Vol 38 (2) ◽  
pp. 147-153
Author(s):  
高一骁 GAO Yi-xiao ◽  
蒋永乐 JIANG Yong-le ◽  
毕 剑 BI Jian ◽  
赖 欣 LAI Xin ◽  
高道江 GAO Dao-jiang
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Room Temperature ◽  
Galvanic Cell ◽  
Cell Method ◽  
Temperature Preparation

Cutoff Frequency Study on Nanocrystalline FeNbB Thin Films

2012 ◽  
Vol 465 ◽  
pp. 72-75
Author(s):  
Xiao Long Jiang ◽  
Y.J. Yao ◽  
M. Lai ◽  
K. Peng ◽  
Y.W. Du
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Ion Beam ◽  
Cutoff Frequency ◽  
Magnetic Behavior ◽  
Soft Magnetic Properties ◽  
Ion Beam Sputtering ◽  
Soft Magnetic ◽  
Beam Sputtering

A series of nanocrystalline FeNbB films were fabricated using ion-beam sputtering technique from FeNbB target. Pieces of these films were annealed for 1 hour at various temperatures up to 5730C. Room temperature soft magnetic properties of these films were measured. The influence of microstructure on magnetic behavior in nanocrystalline FeNbB films is investigated in a series of specimens with different film’s thickness. For the sample 120nm and 5000C annealed, cutoff frequency was found to be 5E7 Hz, which has the μf0=5E10.

scholarly journals Room Temperature Preparation of Poly-Si Thin Films by IBE with Substrate Bias Method

2005 ◽  
Vol 6 (2) ◽  
pp. 57-62
Author(s):  
Byung-Yoon Cho ◽  
Sung-Chae Yang ◽  
Byoung-Sung Han ◽  
Jung-Hui Lee ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Substrate Bias ◽  
Temperature Preparation

Room-temperature preparation and properties of cadmium sulfide thin films by ion-beam sputtering deposition

2013 ◽  
Vol 273 ◽  
pp. 491-495 ◽  
Author(s):  
Guang-Xing Liang ◽  
Ping Fan ◽  
Zhuang-Hao Zheng ◽  
Jing-Ting Luo ◽  
Dong-Ping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Temperature Preparation

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

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