The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

2011 ◽  
Vol 406 (23) ◽  
pp. 4436-4439 ◽  
Author(s):  
G. Bai ◽  
R. Li ◽  
H.N. Xu ◽  
Y.D. Xia ◽  
Z.G. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallization Behavior ◽  
Thickness Dependence

THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-177-C6-177
Author(s):  
J. YUAN ◽  
S. BERGER ◽  
L. M. BROWN
Keyword(s):  
Thin Films ◽  
Thickness Dependence

Thickness dependence of the properties of epitaxial barium strontium titanate thin films

2015 ◽  
Vol 57 (8) ◽  
pp. 1529-1534 ◽  
Author(s):  
V. B. Shirokov ◽  
Yu. I. Golovko ◽  
V. M. Mukhortov ◽  
Yu. I. Yuzyuk ◽  
P. E. Janolin ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Thickness Dependence ◽  
Barium Strontium

Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Large Change ◽  
Thickness Dependence ◽  
Dielectric Measurement ◽  
Switching Speed ◽  
Wide Range ◽  
Poly Vinylidene Fluoride ◽  
Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

2011 ◽  
Vol 128 (3) ◽  
pp. 405-409 ◽  
Author(s):  
Huan Huang ◽  
Simian Li ◽  
Fengxiao Zhai ◽  
Yang Wang ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulse ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Phase Change Memory ◽  
Picosecond Laser ◽  
Picosecond Laser Pulse ◽  
Change Memory

Thickness Dependence and Enhancement of $H_{{\rm C}1}$ in Epitaxial $\hbox{MgB}_{2}$ Thin Films

2013 ◽  
Vol 23 (3) ◽  
pp. 7500604-7500604 ◽  
Author(s):  
D. B. Beringer ◽  
C. Clavero ◽  
T. Tan ◽  
X. X. Xi ◽  
W. M. Roach ◽  
...  
Keyword(s):  
Thin Films ◽  
Thickness Dependence

Thickness dependence of transient absorption spectrum for InGaN thin films

2003 ◽  
Vol 0 (7) ◽  
pp. 2606-2609
Author(s):  
M.-S. Nomura ◽  
M. Arita ◽  
S. Ashihara ◽  
S. Kako ◽  
M. Nishioka ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Transient Absorption ◽  
Thickness Dependence ◽  
Transient Absorption Spectrum

Thickness dependence of anomalous magnetic behavior in epitaxial Fe3O4(111) thin films: Effect of density of antiphase boundaries

2004 ◽  
Vol 70 (17) ◽  
Author(s):  
J.-B. Moussy ◽  
S. Gota ◽  
A. Bataille ◽  
M.-J. Guittet ◽  
M. Gautier-Soyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Behavior ◽  
Thickness Dependence ◽  
Antiphase Boundaries

A study on the thickness dependence of static and dynamic magnetic properties of Ni81Fe19 thin films

2016 ◽  
Vol 419 ◽  
pp. 456-463 ◽  
Author(s):  
P.R. Kern ◽  
O.E. da Silva ◽  
J.V. de Siqueira ◽  
R.D. Della Pace ◽  
J.N. Rigue ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Thickness Dependence
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