Hybridization of Cr3d–N2p–Ga4sin the wide band-gap diluted magnetic semiconductorGa1−xCrxN

2004 ◽  
Vol 70 (16) ◽  
Author(s):  
J. J. Kim ◽  
H. Makino ◽  
K. Kobayashi ◽  
Y. Takata ◽  
T. Yamamoto ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Diluted Magnetic

Magneto-optical spectroscopy of the wide band gap diluted magnetic semiconductor GaMnN

2006 ◽  
Vol 126 (2-3) ◽  
pp. 240-244 ◽  
Author(s):  
S. Marcet ◽  
D. Ferrand ◽  
S. Kuroda ◽  
E. Gheeraert ◽  
R.M. Galera ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Diluted Magnetic

scholarly journals Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200 K

2013 ◽  
Vol 103 (2) ◽  
pp. 022410 ◽  
Author(s):  
Xiaojun Yang ◽  
Yuke Li ◽  
Chenyi Shen ◽  
Bingqi Si ◽  
Yunlei Sun ◽  
...  
Keyword(s):  
Band Gap ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Diluted Magnetic ◽  
Co Doped

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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