Hole states in wide band-gap diluted magnetic semiconductors and oxides

2008 ◽  
Vol 77 (8) ◽  
Author(s):  
Tomasz Dietl
2012 ◽  
Vol 535-537 ◽  
pp. 1252-1257 ◽  
Author(s):  
Yu Zhang ◽  
Tong Li ◽  
Ya Xin Wang ◽  
Xin Wei Zhao

The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as DMSs, has attracted much interest. Among DMSs, the system of Mn-doped ZnO is considered as the most promising candidates. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Mn DMSs.


2013 ◽  
Vol 652-654 ◽  
pp. 585-589 ◽  
Author(s):  
Tong Li ◽  
Qiong Jie ◽  
Yu Zhang ◽  
Ya Xin Wang ◽  
Xiao Chang Ni

The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as diluted magnetic semiconductors (DMSs), has attracted much interest. These materials are applicable to spin-based optoelectronic devices working at room temperature (RT). Among DMSs, the system of Co-doped ZnO is considered as the most promising candidate, which was expected to robust magnetism. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Co DMSs. The magnetic properties and possible mechanism of ZnO:Co DMSs prepared by different methods are summarized and reviewed.


2006 ◽  
Vol 126 (2-3) ◽  
pp. 240-244 ◽  
Author(s):  
S. Marcet ◽  
D. Ferrand ◽  
S. Kuroda ◽  
E. Gheeraert ◽  
R.M. Galera ◽  
...  

2004 ◽  
Vol 70 (16) ◽  
Author(s):  
J. J. Kim ◽  
H. Makino ◽  
K. Kobayashi ◽  
Y. Takata ◽  
T. Yamamoto ◽  
...  

1990 ◽  
Vol 5 (3S) ◽  
pp. S270-S273 ◽  
Author(s):  
W J M de Jonge ◽  
H J M Swagten ◽  
C E P Gerrits ◽  
A Twardowski

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