scholarly journals Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200 K

2013 ◽  
Vol 103 (2) ◽  
pp. 022410 ◽  
Author(s):  
Xiaojun Yang ◽  
Yuke Li ◽  
Chenyi Shen ◽  
Bingqi Si ◽  
Yunlei Sun ◽  
...  
Keyword(s):  
Band Gap ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Diluted Magnetic ◽  
Co Doped

Magneto-optical spectroscopy of the wide band gap diluted magnetic semiconductor GaMnN

2006 ◽  
Vol 126 (2-3) ◽  
pp. 240-244 ◽  
Author(s):  
S. Marcet ◽  
D. Ferrand ◽  
S. Kuroda ◽  
E. Gheeraert ◽  
R.M. Galera ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Diluted Magnetic

An Oxide-Diluted Magnetic Semiconductor: Co-Doped ZnO

2013 ◽  
Vol 652-654 ◽  
pp. 585-589 ◽  
Author(s):  
Tong Li ◽  
Qiong Jie ◽  
Yu Zhang ◽  
Ya Xin Wang ◽  
Xiao Chang Ni
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Experimental Studies ◽  
Magnetic Semiconductor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Co Doped

The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as diluted magnetic semiconductors (DMSs), has attracted much interest. These materials are applicable to spin-based optoelectronic devices working at room temperature (RT). Among DMSs, the system of Co-doped ZnO is considered as the most promising candidate, which was expected to robust magnetism. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Co DMSs. The magnetic properties and possible mechanism of ZnO:Co DMSs prepared by different methods are summarized and reviewed.

Wide Band Gap Al and In Co-doped ZnO Films for Near-Infrared Plasmonic Application

Plasmonics ◽  
2021 ◽  
Author(s):  
Soumya Kannoth ◽  
Packia Selvam Irulappan ◽  
Sandip Dhara ◽  
Sankara Narayanan Potty
Keyword(s):  
Band Gap ◽  
Near Infrared ◽  
Wide Band ◽  
Zno Films ◽  
Wide Band Gap ◽  
Doped Zno ◽  
Co Doped

The impact of hydrogenation conditions on the physical properties of the degenerated Ni/Al co-doped diluted magnetic semiconductor anatase nanoparticles

2021 ◽  
Vol 11 ◽  
Author(s):  
A. A. Dakhel
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Precipitation Method ◽  
Optical Absorption Spectroscopy ◽  
X Ray Diffraction ◽  
Ferromagnetic Properties ◽  
Anatase Nanoparticles ◽  
Diluted Magnetic ◽  
The Impact ◽  
Co Doped

: Anatase (TiO2) nanoparticles co-doped with Ni/Al ions were synthesized by a thermo-precipitation method. The samples were characterized by using X‐Ray diffraction and optical absorption spectroscopy. The structural/optical investigations established the development of substitutional solid solutions: TiO2:Ni:Al. The magnetization investigations were performed to study the generated stable ferromagnetic properties of the samples due to the Ni2+ doping. To boost the created ferromagnetic properties, Al ions co-dopings were employed to supply/densify the itinerant electrons. It was planned to decide the suitable hydrogenation conditions and temperature (TH), which are necessary to create appreciable strength of ferromagnetic properties in the host co-doped samples based on TiO2 for practical uses. The results established that the ferromagnetic energy (Umag) was increased by ~240% and the saturation magnetization by ~140% with increasing of TH from 400 oC to 500oC. The obtained Msat was higher by ~50 times than that previously attained for Ni-doped TiO2. Such novel results were discussed and explained through the spin-spin Heisenberg interactions.

scholarly journals Magnetic Properties of Co doped ZnS Diluted Magnetic Semiconductor

2013 ◽  
Vol 430 ◽  
pp. 012076 ◽  
Author(s):  
Qingteng Hou ◽  
Kai Chen ◽  
Hongguang Zhang ◽  
Yongtao Li ◽  
Hao Liu ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic ◽  
Co Doped

Electronic structure and magnetic properties of diluted magnetic semiconductor K and Mn co-doped BaCd2As2 from first-principles calculations

2014 ◽  
Vol 28 (14) ◽  
pp. 1450111 ◽  
Author(s):  
L. Hua ◽  
Q. L. Zhu
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Density Functional ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Antiferromagnetic Coupling ◽  
Generalized Gradient ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
Co Doped

In this paper, we have investigated the electronic structure and magnetic properties of K and Mn co-doped BaCd 2 As 2 using density functional theory within the generalized gradient approximation ( GGA ) + U schemes. Calculations show that the ground state magnetic structure of Mn -doped BaCd 2 As 2 is antiferromagnetic while K and Mn co-doped BaCd 2 As 2 is ferromagnetic. Electronic structures indicate that the superexchange mechanism leads to the antiferromagnetic coupling between Mn atoms in Mn -doped BaCd 2 As 2 while the hole-mediated Zener's p–d exchange mechanism leads to the ferromagnetic coupling between Mn atoms in K and Mn co-doped BaCd 2 As 2.

Effect of Growth Temperature on Structural and Magneto-Transport Properties of Co-Doped In2O3 Diluted Magnetic Semiconductors

2008 ◽  
Vol 1119 ◽  
Author(s):  
A Ghosh ◽  
R K Gupta ◽  
P K Kahol ◽  
K Ghosh
Keyword(s):  
Transport Properties ◽  
Growth Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diluted Magnetic ◽  
Co Doped

AbstractThin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Different characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on structural, electrical, and magneto-transport properties of these films. Crystalinity of the films increases with the growth temperature. The films grown at high temperature have preferred orientation along (222) direction, while films grown at low temperature behave more like to nanocrystaline. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity and magnetoresistance of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystalinity of the films.

Sign in / Sign up

Export Citation Format

Share Document