Influence of magnetic-field-induced tuning of disorder and band structure on the magnetoresistance of paramagnetic dilute magnetic semiconductors

2004 ◽  
Vol 69 (16) ◽  
Author(s):  
C. Michel ◽  
P. J. Klar ◽  
S. D. Baranovskii ◽  
P. Thomas
Keyword(s):  
Magnetic Field ◽  
Band Structure ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors

The Faraday effect in dilute magnetic semiconductors in ultrahigh magnetic field

1993 ◽  
Vol 29 (6) ◽  
pp. 3422-3424 ◽  
Author(s):  
P.I. Nikitin ◽  
O.M. Tatzenko ◽  
V.V. Platonov ◽  
A.I. Savchuk ◽  
S. Nikitin
Keyword(s):  
Magnetic Field ◽  
Faraday Effect ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Ultrahigh Magnetic Field

Mobility of Charge Carriers in Dilute Magnetic Semiconductors

2007 ◽  
Vol 999 ◽  
Author(s):  
Michael G. Foygel ◽  
James Niggemann ◽  
A. G. Petukhov
Keyword(s):  
Magnetic Field ◽  
Electrical Transport ◽  
Magnetic Semiconductors ◽  
Magnetic Moments ◽  
Dilute Magnetic Semiconductors ◽  
Charge Carriers ◽  
Spin Fluctuations ◽  
Magnetic Impurities ◽  
Mobility Of Charge Carriers ◽  
The Magnetic Field

AbstractWe studied electrical transport in dilute magnetic semiconductors, which is determined by scattering of free carriers by localized magnetic moments. In our calculations of the scattering time and the mobility of the majority and minority-spin carriers we took into account both the effects of thermal spin fluctuations and of built-in spatial disorder of the magnetic atoms. These effects are responsible for the magnetic-field dependence of the mobility of the charge carriers. The application of the external magnetic field suppresses the thermodynamic spin fluctuations thus increasing the mobility. Simultaneously, depending on the type of the carriers and on parameters of the impurity potential, scattering by built-in spatial fluctuations of the atomic spins increases or decreases with the magnetic field. The latter effect is due to the change in the magnitude of the random local Zeeman splitting with the magnetic field. We discuss the role of the above effects on mobility and magnetoresistance of semiconductors where magnetic impurities are electrically active or neutral.

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Extrinsic photonic band structure calculations of a doped semiconductor under an external magnetic field

2008 ◽  
Vol 372 (31) ◽  
pp. 5224-5228 ◽  
Author(s):  
Renlong Zhou ◽  
Xuewen Wang ◽  
Bingju Zhou ◽  
Yongyi Gao ◽  
Xiaojuan Liu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Band Structure ◽  
Photonic Band Structure ◽  
Band Structure Calculations ◽  
Photonic Band ◽  
Structure Calculations

scholarly journals Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

2005 ◽  
Vol 86 (17) ◽  
pp. 172504 ◽  
Author(s):  
Priya Mahadevan ◽  
J. M. Osorio-Guillén ◽  
Alex Zunger
Keyword(s):  
Transition Metal ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors
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