scholarly journals Smearing of charge fluctuations in a grain by spin-flip assisted tunneling

2003 ◽  
Vol 67 (20) ◽  
Author(s):  
Karyn Le Hur ◽  
Pascal Simon
Keyword(s):  
Charge Fluctuations ◽  
Spin Flip ◽  
Assisted Tunneling

scholarly journals Dynamics of spin-flip photon-assisted tunneling

2014 ◽  
Vol 89 (7) ◽  
Author(s):  
F. R. Braakman ◽  
J. Danon ◽  
L. R. Schreiber ◽  
W. Wegscheider ◽  
L. M. K. Vandersypen
Keyword(s):  
Spin Flip ◽  
Assisted Tunneling

Spin-flip assisted tunneling through quantum dot based magnetic tunnel junctions

2011 ◽  
Vol 82 (1) ◽  
pp. 37-46 ◽  
Author(s):  
M. J. Ma ◽  
M. B. A. Jalil ◽  
S. G. Tan ◽  
D. E. Koh
Keyword(s):  
Quantum Dot ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Flip ◽  
Assisted Tunneling

A Combined Spin-Flip and IP/EA Approach for Handling Spin and Spatial Degeneracies: Application to Double Exchange Systems

2018 ◽  
Author(s):  
Shannon Houck ◽  
Nicholas Mayhall
Keyword(s):  
Single Molecule ◽  
Double Exchange ◽  
Computational Effort ◽  
Strongly Correlated ◽  
Single Molecule Magnets ◽  
New Approach ◽  
Spin Flip ◽  
Model Hamiltonian ◽  
Simultaneous Existence ◽  
Exchange Parameters

<div>Many multiconfigurational systems, such as single-molecule magnets, are difficult to study using traditional computational methods due to the simultaneous existence of both spin and spatial degeneracies. In this work, a new approach termed n-spin-flip Ionization Potential/Electron Affinity (<i>n</i>SF-IP or <i>n</i>SF-EA) is introduced which combines the spin-flip method of Anna Krylov with particle-number changing IP/EA methods. We demonstrate the efficacy of the approach by applying it to the strongly-correlated N<sub>2</sub><sup>+</sup> as well as several double exchange systems. We also demonstrate that when these systems are well-described by a double exchange model Hamiltonian, only 1SF-IP/EA is required to extract the double exchange parameters and accurately predict energies for the low-spin states. This significantly reduces the computational effort for studying such systems. The effects of including additional excitations (using a RAS-<i>n</i>SF-IP/EA scheme) are also examined, with particular emphasis on hole and particle excitations.</div>

A Combined Spin-Flip and IP/EA Approach for Handling Spin and Spatial Degeneracies: Application to Double Exchange Systems

2018 ◽  
Author(s):  
Shannon Houck ◽  
Nicholas Mayhall
Keyword(s):  
Single Molecule ◽  
Double Exchange ◽  
Computational Effort ◽  
Strongly Correlated ◽  
Single Molecule Magnets ◽  
New Approach ◽  
Spin Flip ◽  
Model Hamiltonian ◽  
Simultaneous Existence ◽  
Exchange Parameters

<div>Many multiconfigurational systems, such as single-molecule magnets, are difficult to study using traditional computational methods due to the simultaneous existence of both spin and spatial degeneracies. In this work, a new approach termed n-spin-flip Ionization Potential/Electron Affinity (<i>n</i>SF-IP or <i>n</i>SF-EA) is introduced which combines the spin-flip method of Anna Krylov with particle-number changing IP/EA methods. We demonstrate the efficacy of the approach by applying it to the strongly-correlated N<sub>2</sub><sup>+</sup> as well as several double exchange systems. We also demonstrate that when these systems are well-described by a double exchange model Hamiltonian, only 1SF-IP/EA is required to extract the double exchange parameters and accurately predict energies for the low-spin states. This significantly reduces the computational effort for studying such systems. The effects of including additional excitations (using a RAS-<i>n</i>SF-IP/EA scheme) are also examined, with particular emphasis on hole and particle excitations.</div>

scholarly journals Full counting statistics of spin-flip and spin-conserving charge transitions in Pauli-spin blockade

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Sadashige Matsuo ◽  
Kazuyuki Kuroyama ◽  
Shunsuke Yabunaka ◽  
Sascha R. Valentin ◽  
Arne Ludwig ◽  
...  
Keyword(s):  
Spin Flip ◽  
Full Counting Statistics ◽  
Spin Blockade ◽  
Counting Statistics

Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

2021 ◽  
Vol 118 (2) ◽  
pp. 021105
Author(s):  
Jian Yin ◽  
Ehsanollah Fathi ◽  
Hossein Zamani Siboni ◽  
Chao Xu ◽  
Dayan Ban
Keyword(s):  
Light Emitting Diodes ◽  
Surface Defects ◽  
Light Emitting ◽  
Tunneling Recombination ◽  
Assisted Tunneling

scholarly journals Universal signatures of Dirac fermions in entanglement and charge fluctuations

2021 ◽  
Vol 103 (23) ◽  
Author(s):  
Valentin Crépel ◽  
Anna Hackenbroich ◽  
Nicolas Regnault ◽  
Benoit Estienne
Keyword(s):  
Dirac Fermions ◽  
Charge Fluctuations
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