Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field

2002 ◽  
Vol 65 (11) ◽  
Author(s):  
E. Alphandéry ◽  
R. J. Nicholas ◽  
N. J. Mason ◽  
S. G. Lyapin ◽  
P. C. Klipstein
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Excitation Power ◽  
Self Assembled

Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure

1997 ◽  
Vol 70 (4) ◽  
pp. 505-507 ◽  
Author(s):  
I. E. Itskevich ◽  
M. Henini ◽  
H. A. Carmona ◽  
L. Eaves ◽  
P. C. Main ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
High Pressure ◽  
Strong Magnetic Field ◽  
Photoluminescence Spectroscopy ◽  
Inas Quantum Dots ◽  
Self Assembled

Magnetic field effects in InP self-assembled quantum dots

1998 ◽  
Vol 256-258 ◽  
pp. 169-172 ◽  
Author(s):  
Mitsuru Sugisaki ◽  
Hong-Wen Ren ◽  
Kenichi Nishi ◽  
Shigeo Sugou ◽  
Tsuyoshi Okuno ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Self Assembled

scholarly journals Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

2019 ◽  
Vol 65 (3) ◽  
pp. 231
Author(s):  
G. Linares García ◽  
And L. Meza-Montes
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Probability Density ◽  
Electronic States ◽  
Zeeman Splitting ◽  
Growth Direction ◽  
Two Systems ◽  
Piezoelectric Effects ◽  
Self Assembled ◽  
The Magnetic Field

A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected  too.

scholarly journals Kondo-excitons and Auger processes in self-assembled quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
A. O. Govorov ◽  
K. Karrai ◽  
R. J. Warburton ◽  
A. V. Kalameitsev
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Electron Spin ◽  
Electron Gas ◽  
Kondo Temperature ◽  
Two Dimensional ◽  
Wetting Layer ◽  
Voltage Dependent ◽  
Self Assembled ◽  
The Continuum

ABSTRACTWe describe theoretically novel excitons in self-assembled quantum dots interacting with a two-dimensional (2D) electron gas in the wetting layer. In the presence of the Fermi sea, the optical lines become strongly voltage-dependent. If the electron spin is nonzero, the width of optical lines is given by kBTK, where TK is Kondo temperature. If the spin is zero, the exciton couples with the continuum due to Auger-like processes. This leads to anticrossings in a magnetic field. Such states can be called Kondo-Anderson excitons. Some of the described phenomena are observed in recent experiments.

SPIN POLARIZATION IN SEMIMAGNETIC CdMnSe/ZnSe QUANTUM DOTS WITH ZERO EXCITON g FACTOR

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1626-1631
Author(s):  
T. SCHMIDT ◽  
L. WORSCHECH ◽  
M. SCHEIBNER ◽  
T. SLOBODSKYY ◽  
L. W. MOLENKAMP ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Excitation Power ◽  
Sign Reversal ◽  
G Factor ◽  
Circularly Polarized ◽  
Heating Mechanism ◽  
High Laser ◽  
Luminescence Polarization ◽  
The Magnetic Field

We have investigated the degree of circular polarization (ρ) in the emission of semimagnetic CdMnSe/ZnSe quantum dots (QDs) with Mn contents of nominally 0, 1 and 2 %. Circularly polarized excitation was used to control the polarization of the excited carriers. The g factors were determined from the dependence of ρ on the magnetic field strength. We demonstrate that in QDs with 1 % Mn the exciton g factor is vanishingly small. We also present measurements on the excitation power dependent changes of the polarization. A direct heating mechanism is identified as origin of the drastic enhancement of the g factor by ramping up the excitation power. For high laser powers the exciton g factor increases by a factor of 30. In addition, by comparing the luminescence polarization of QDs with 2 % Mn and without Mn a sign reversal of the g factor was observed.

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