Electronic structures of InAs self-assembled quantum dots in an axial magnetic field

1998 ◽  
Vol 58 (7) ◽  
pp. 3561-3564 ◽  
Author(s):  
Shu-Shen Li ◽  
Jian-Bai Xia
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Electronic Structures ◽  
Axial Magnetic Field ◽  
Self Assembled

Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure

1997 ◽  
Vol 70 (4) ◽  
pp. 505-507 ◽  
Author(s):  
I. E. Itskevich ◽  
M. Henini ◽  
H. A. Carmona ◽  
L. Eaves ◽  
P. C. Main ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
High Pressure ◽  
Strong Magnetic Field ◽  
Photoluminescence Spectroscopy ◽  
Inas Quantum Dots ◽  
Self Assembled

Magnetic field effects in InP self-assembled quantum dots

1998 ◽  
Vol 256-258 ◽  
pp. 169-172 ◽  
Author(s):  
Mitsuru Sugisaki ◽  
Hong-Wen Ren ◽  
Kenichi Nishi ◽  
Shigeo Sugou ◽  
Tsuyoshi Okuno ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Self Assembled

Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field

2002 ◽  
Vol 65 (11) ◽  
Author(s):  
E. Alphandéry ◽  
R. J. Nicholas ◽  
N. J. Mason ◽  
S. G. Lyapin ◽  
P. C. Klipstein
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Excitation Power ◽  
Self Assembled

scholarly journals Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

2019 ◽  
Vol 65 (3) ◽  
pp. 231
Author(s):  
G. Linares García ◽  
And L. Meza-Montes
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Probability Density ◽  
Electronic States ◽  
Zeeman Splitting ◽  
Growth Direction ◽  
Two Systems ◽  
Piezoelectric Effects ◽  
Self Assembled ◽  
The Magnetic Field

A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected  too.

Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots

1999 ◽  
Vol 59 (8) ◽  
pp. 5678-5687 ◽  
Author(s):  
Lin-Wang Wang ◽  
Jeongnim Kim ◽  
Alex Zunger
Keyword(s):  
Quantum Dots ◽  
Electronic Structures ◽  
Self Assembled

scholarly journals Kondo-excitons and Auger processes in self-assembled quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
A. O. Govorov ◽  
K. Karrai ◽  
R. J. Warburton ◽  
A. V. Kalameitsev
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Electron Spin ◽  
Electron Gas ◽  
Kondo Temperature ◽  
Two Dimensional ◽  
Wetting Layer ◽  
Voltage Dependent ◽  
Self Assembled ◽  
The Continuum

ABSTRACTWe describe theoretically novel excitons in self-assembled quantum dots interacting with a two-dimensional (2D) electron gas in the wetting layer. In the presence of the Fermi sea, the optical lines become strongly voltage-dependent. If the electron spin is nonzero, the width of optical lines is given by kBTK, where TK is Kondo temperature. If the spin is zero, the exciton couples with the continuum due to Auger-like processes. This leads to anticrossings in a magnetic field. Such states can be called Kondo-Anderson excitons. Some of the described phenomena are observed in recent experiments.

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