scholarly journals Theory of photoluminescence from modulation-doped self-assembled quantum dots in a magnetic field

1997 ◽  
Vol 55 (19) ◽  
pp. 13066-13071 ◽  
Author(s):  
Arkadiusz Wojs ◽  
Pawel Hawrylak
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Self Assembled

Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure

1997 ◽  
Vol 70 (4) ◽  
pp. 505-507 ◽  
Author(s):  
I. E. Itskevich ◽  
M. Henini ◽  
H. A. Carmona ◽  
L. Eaves ◽  
P. C. Main ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
High Pressure ◽  
Strong Magnetic Field ◽  
Photoluminescence Spectroscopy ◽  
Inas Quantum Dots ◽  
Self Assembled

Magnetic field effects in InP self-assembled quantum dots

1998 ◽  
Vol 256-258 ◽  
pp. 169-172 ◽  
Author(s):  
Mitsuru Sugisaki ◽  
Hong-Wen Ren ◽  
Kenichi Nishi ◽  
Shigeo Sugou ◽  
Tsuyoshi Okuno ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Self Assembled

Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field

2002 ◽  
Vol 65 (11) ◽  
Author(s):  
E. Alphandéry ◽  
R. J. Nicholas ◽  
N. J. Mason ◽  
S. G. Lyapin ◽  
P. C. Klipstein
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Excitation Power ◽  
Self Assembled

scholarly journals Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

2019 ◽  
Vol 65 (3) ◽  
pp. 231
Author(s):  
G. Linares García ◽  
And L. Meza-Montes
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Probability Density ◽  
Electronic States ◽  
Zeeman Splitting ◽  
Growth Direction ◽  
Two Systems ◽  
Piezoelectric Effects ◽  
Self Assembled ◽  
The Magnetic Field

A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected  too.

scholarly journals Kondo-excitons and Auger processes in self-assembled quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
A. O. Govorov ◽  
K. Karrai ◽  
R. J. Warburton ◽  
A. V. Kalameitsev
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Electron Spin ◽  
Electron Gas ◽  
Kondo Temperature ◽  
Two Dimensional ◽  
Wetting Layer ◽  
Voltage Dependent ◽  
Self Assembled ◽  
The Continuum

ABSTRACTWe describe theoretically novel excitons in self-assembled quantum dots interacting with a two-dimensional (2D) electron gas in the wetting layer. In the presence of the Fermi sea, the optical lines become strongly voltage-dependent. If the electron spin is nonzero, the width of optical lines is given by kBTK, where TK is Kondo temperature. If the spin is zero, the exciton couples with the continuum due to Auger-like processes. This leads to anticrossings in a magnetic field. Such states can be called Kondo-Anderson excitons. Some of the described phenomena are observed in recent experiments.

Magnetoexcitons in Type-II Self-Assembled Quantum Dots and Quantum-Dot Superlattices

2006 ◽  
Vol 518 ◽  
pp. 51-56
Author(s):  
Dj. Veljković ◽  
M. Tadić ◽  
F.M. Peeters
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Angular Momentum ◽  
Quantum Dot ◽  
Oscillator Strength ◽  
Band Alignment ◽  
Type Ii ◽  
Angular Momenta ◽  
Self Assembled ◽  
The Magnetic Field

Exciton states in type-II InP/InGaP and GaSb/GaAs self-assembled quantum dots and quantum-dot superlattices subject to a normal magnetic field are calculated. Strain is explicitly taken into account in single particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Strain reverts type II band alignment in InP quantum dots to type I, therefore no transitions between the lowest energy states of different angular momenta are observed. On the other hand, strain increases the barrier for the electron in the conduction band of GaSb/GaAs quantum dots, therefore the exciton, being composed of electron and hole states of various angular momenta, may have a finite angular momentum in the ground state. Consequently, the oscillator strength in the InP single quantum dot and quantum-dot superlattice increases with the magnetic field, while the angular momentum transitions between the bright and the dark exciton states in the GaSb system bring about decay of the oscillator strength when the magnetic field exceeds a certain value.

Sign in / Sign up

Export Citation Format

Share Document