Temperature dependence of vibrational spectra of H-point defect complexes andH2*in Si

2001 ◽  
Vol 64 (8) ◽  
Author(s):  
M. Suezawa ◽  
N. Fukata ◽  
T. Takahashi ◽  
M. Saito ◽  
H. Yamada-Kaneta
Keyword(s):  
Temperature Dependence ◽  
Point Defect ◽  
Vibrational Spectra ◽  
Defect Complexes

Implanted Dopant-Defect Interactons in GaAs

1987 ◽  
Vol 93 ◽  
Author(s):  
S. J. Pearton ◽  
J. S. Williams ◽  
K. T. Short ◽  
S. T. Johnson ◽  
J. M. Gibson ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Temperature Dependence ◽  
Point Defect ◽  
Fine Scale ◽  
Furnace Annealing ◽  
Defect Complexes ◽  
Implantation Temperature ◽  
Scale Point ◽  
Peak Value

ABSTRACTThe implantation temperature dependence of dopant solubility and electrical activity was investigated for Sn, Cd and Te ions in GaAs. Implantation doses of 5×1012 – 5×1015 cm−2 were performed in the temperature range from LN2 to 400°C, followed by rapid thermal annealing (950°C) or furnace annealing between 650°C and 850°C. Solubilities above 1020 cm−3 were obtained for all of the species, with a peak value of 2.5×1021 cm−3 for Te after 850°C furnace annealing. However essentially no correlation existed between dopant solubility and electrical activity or between electrical activity and the high density of defects remaining after many of the annealing cycles. This emphases the role of fine scale, point defect complexes in controlling the electrical activity of implanted dopants in GaAs.

The Vibrational Spectra of NH4VO3 at Elevated Temperatures and Pressures

1987 ◽  
Vol 42 (7) ◽  
pp. 843-852 ◽  
Author(s):  
A . M. Heyns ◽  
M. W. Venter ◽  
K.-J. Range
Keyword(s):  
Hydrogen Bonds ◽  
Temperature Dependence ◽  
Vibrational Spectra ◽  
Elevated Temperatures ◽  
Structural Data ◽  
Volume Effect ◽  
Ambient Conditions ◽  
Hydrogen Bond Interactions ◽  
Diamond Anvil ◽  
Pressure Changes

Abstract Results obtained from the vibrational spectra of NH4VO3 and its deuterated analogues show that at least two types of hydrogen bond interactions can be identified at am bient conditions. In accordance with the structural data on NH4VO3 (F. C. Hawthorne and C. Calvo, J. Solid State Chem. 22, 157 (1977)) these interactions are assigned to normal, strong hydrogen bonds and weaker bifurcated ones, respectively. The temperature dependence of some of the N -H bands indicates that the normal hydrogen bonds decrease in strength with increasing temperatures, while the bifurcated ones tend to increase in strength. The NH4+ ions do not show fluxional behaviour at ambient conditions and even the bifurcated hydrogen bonds are of the type that is dominated by acceptor strength of the anions and not by a volume effect. The Ram an active NH4+ vibrations are very weak compared to the V - O modes and could not all be observed in the highpressure diamond anvil cell. The temperature dependence of the V - O Ram an active modes suggests that changes in the crystals of NH4VO3 brought about by the application of heat mainly involve the O -V -O angles, while pressure changes are mostly accommodated by changes in the V -O bridging bonds and O -V -O bridging angles.

scholarly journals Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

2019 ◽  
Vol 9 (4) ◽  
Author(s):  
Jared M. Johnson ◽  
Zhen Chen ◽  
Joel B. Varley ◽  
Christine M. Jackson ◽  
Esmat Farzana ◽  
...  
Keyword(s):  
Point Defect ◽  
Band Gap ◽  
Defect Complexes ◽  
Unusual Formation

Formation and annihilation of H-point defect complexes in quenched Si doped with C

2000 ◽  
Vol 88 (8) ◽  
pp. 4525 ◽  
Author(s):  
Naoki Fukata ◽  
Masashi Suezawa
Keyword(s):  
Point Defect ◽  
Defect Complexes ◽  
Si Doped
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