Formation and annihilation of H-point defect complexes in quenched Si doped with C

2000 ◽  
Vol 88 (8) ◽  
pp. 4525 ◽  
Author(s):  
Naoki Fukata ◽  
Masashi Suezawa
Keyword(s):  
Point Defect ◽  
Defect Complexes ◽  
Si Doped

scholarly journals Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

2019 ◽  
Vol 9 (4) ◽  
Author(s):  
Jared M. Johnson ◽  
Zhen Chen ◽  
Joel B. Varley ◽  
Christine M. Jackson ◽  
Esmat Farzana ◽  
...  
Keyword(s):  
Point Defect ◽  
Band Gap ◽  
Defect Complexes ◽  
Unusual Formation

Impurity-assisted annealing of point defect complexes in ion- implanted silicon

1999 ◽  
Vol 273-274 ◽  
pp. 489-492 ◽  
Author(s):  
Paolo Pellegrino ◽  
Andrej Yu Kuznetsov ◽  
Bengt G. Svensson
Keyword(s):  
Point Defect ◽  
Defect Complexes ◽  
Ion Implanted

Application of Density Functional Theory to Point Defect Anelasticity of Carbon-Containing Austenitic Alloys

2012 ◽  
Vol 184 ◽  
pp. 69-74
Author(s):  
Ronald Gibala ◽  
W.A. Counts ◽  
C. Wolverton
Keyword(s):  
Density Functional Theory ◽  
Point Defect ◽  
Density Functional ◽  
Magnetic State ◽  
Binding Energies ◽  
Relaxation Processes ◽  
Functional Theory ◽  
Defect Complexes ◽  
Austenitic Alloys ◽  
Point Defect Clusters

We have used density functional theory (DFT) to determine binding energies (BE’s) of carbon-vacancy (C-v) point-defect complexes of probable importance to C-based anelastic relaxation processes in fcc iron alloys. Calculations are presented for three types of stable point defect clusters: C-v pairs, di-C-v triplets, and tri-C-v quadruplets. We demonstrate semi-quantitative consistency of the calculated BE’s with internal friction results on Fe-36%Ni-C alloys. The BE’s, which are in the range-0.37 eV to-0.64 eV, were determined for a hypothetical non-magnetic (NM) fcc Fe. The effect of the magnetic state of fcc Fe on some of these quantities was investigated by DFT and is shown to be significant; the BE’s appear to be reduced in antiferromagnetic (AFM) fcc Fe.

Dislocation Related D-Band Luminescence; the Effects of Transition Metal Contamination

1989 ◽  
Vol 163 ◽  
Author(s):  
Victor Higgs ◽  
E.C. Lightowlers ◽  
P. Kightley
Keyword(s):  
Transition Metal ◽  
Point Defect ◽  
Metal Contamination ◽  
Spectral Features ◽  
Tem Analysis ◽  
Strain Fields ◽  
Defect Complexes ◽  
Metal Atoms ◽  
Dislocation Densities ◽  
Before And After

AbstractPhotoluminescence measurements have been made on plastically formed silicon, free from metal contamination, with dislocation densities in the range 104-108cm-2. Only after deliberate contamination with Cu, Fe or Ni were the dislocation related D-bands the dominant spectral features observed. TEM analysis has revealed that there are no differences in the dislocation structures before and after contamination and that there is no evidence for precipitation on the dislocations or in their strain fields. The D-band features may, therefore, be due to impurities (metal atoms or point defect complexes) trapped in the strain fields of the dislocations.

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