scholarly journals Charge transport in manganites: Hopping conduction, the anomalous Hall effect, and universal scaling

2001 ◽  
Vol 63 (18) ◽  
Author(s):  
Y. Lyanda-Geller ◽  
S. H. Chun ◽  
M. B. Salamon ◽  
P. M. Goldbart ◽  
P. D. Han ◽  
...  
Keyword(s):  
Charge Transport ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Hopping Conduction ◽  
Universal Scaling

Universal scaling of the anomalous Hall effect inFe3O4epitaxial thin films

2008 ◽  
Vol 77 (10) ◽  
Author(s):  
A. Fernández-Pacheco ◽  
J. M. De Teresa ◽  
J. Orna ◽  
L. Morellon ◽  
P. A. Algarabel ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Universal Scaling

scholarly journals Anomalous Hall effect in magnetite: Universal scaling relation between Hall and longitudinal conductivity in low-conductivity ferromagnets

2008 ◽  
Vol 78 (9) ◽  
Author(s):  
Deepak Venkateshvaran ◽  
Wolfgang Kaiser ◽  
Andrea Boger ◽  
Matthias Althammer ◽  
M. S. Ramachandra Rao ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Universal Scaling ◽  
Longitudinal Conductivity

Universal scaling of the anomalous Hall effect

2017 ◽  
Vol 50 (15) ◽  
pp. 155002 ◽  
Author(s):  
Xiaoqian Zhang ◽  
Wei Wang ◽  
Kejie Wang ◽  
Wei Niu ◽  
Bolin Lai ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Universal Scaling

scholarly journals Anomalous Hall effect in ZnxFe3-xO4: Universal scaling law and electron localization below the Verwey transition

AIP Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 085208 ◽  
Author(s):  
N. Jedrecy ◽  
M. Hamieh ◽  
C. Hebert ◽  
M. Escudier ◽  
L. Becerra ◽  
...  
Keyword(s):  
Hall Effect ◽  
Scaling Law ◽  
Anomalous Hall Effect ◽  
Electron Localization ◽  
Verwey Transition ◽  
Universal Scaling

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven

scholarly journals Anomalous Hall effect in a magnetically extended topological insulator heterostructure

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Topological Insulator ◽  
Anomalous Hall Effect
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