scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven

scholarly journals Magnetic Materials: 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe (Adv. Mater. 21/2021)

2021 ◽  
Vol 33 (21) ◽  
pp. 2170160
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Magnetic Materials ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals Anomalous Hall effect and the role of Berry curvature in Co2TiSn Heusler films

2019 ◽  
Vol 100 (5) ◽  
Author(s):  
Benedikt Ernst ◽  
Roshnee Sahoo ◽  
Yan Sun ◽  
Jayita Nayak ◽  
Lukas Müchler ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Berry Curvature

scholarly journals Disorder effects in the anomalous Hall effect induced by Berry curvature

2005 ◽  
Vol 72 (4) ◽  
Author(s):  
N. A. Sinitsyn ◽  
Qian Niu ◽  
Jairo Sinova ◽  
Kentaro Nomura
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Disorder Effects ◽  
Berry Curvature

scholarly journals Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films

Nano Letters ◽  
2020 ◽  
Vol 20 (4) ◽  
pp. 2468-2477 ◽  
Author(s):  
Lingfei Wang ◽  
Qiyuan Feng ◽  
Han Gyeol Lee ◽  
Eun Kyo Ko ◽  
Qingyou Lu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Ultrathin Films ◽  
Anomalous Hall Effect ◽  
Berry Curvature

scholarly journals Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature

2021 ◽  
Vol 103 (13) ◽  
Author(s):  
C. Helman ◽  
A. Camjayi ◽  
E. Islam ◽  
M. Akabori ◽  
L. Thevenard ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Berry Curvature

scholarly journals Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain

2021 ◽  
Vol 118 (18) ◽  
pp. e2101946118
Author(s):  
Di Tian ◽  
Zhiwei Liu ◽  
Shengchun Shen ◽  
Zhuolu Li ◽  
Yu Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Real Space ◽  
Electronic Band ◽  
Berry Curvature ◽  
Hall Resistivity ◽  
Epitaxial Strain ◽  
Wide Range ◽  
Quantum Materials

Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as the intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of the Ru magnetic moment in real space of a tensile-strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in noncoplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.

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