scholarly journals Anomalous Hall effect in magnetite: Universal scaling relation between Hall and longitudinal conductivity in low-conductivity ferromagnets

2008 ◽  
Vol 78 (9) ◽  
Author(s):  
Deepak Venkateshvaran ◽  
Wolfgang Kaiser ◽  
Andrea Boger ◽  
Matthias Althammer ◽  
M. S. Ramachandra Rao ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Universal Scaling ◽  
Longitudinal Conductivity

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Strong Disorder ◽  
Region Temperature ◽  
Localization Region

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

Universal scaling of the anomalous Hall effect inFe3O4epitaxial thin films

2008 ◽  
Vol 77 (10) ◽  
Author(s):  
A. Fernández-Pacheco ◽  
J. M. De Teresa ◽  
J. Orna ◽  
L. Morellon ◽  
P. A. Algarabel ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Universal Scaling

scholarly journals Scaling relation of the anomalous Hall effect in (Ga,Mn)As

2009 ◽  
Vol 80 (12) ◽  
Author(s):  
M. Glunk ◽  
J. Daeubler ◽  
W. Schoch ◽  
R. Sauer ◽  
W. Limmer
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Scaling Relation

Universal scaling of the anomalous Hall effect

2017 ◽  
Vol 50 (15) ◽  
pp. 155002 ◽  
Author(s):  
Xiaoqian Zhang ◽  
Wei Wang ◽  
Kejie Wang ◽  
Wei Niu ◽  
Bolin Lai ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Universal Scaling

scholarly journals Giant, unconventional anomalous Hall effect in the metallic frustrated magnet candidate, KV3Sb5

2020 ◽  
Vol 6 (31) ◽  
pp. eabb6003 ◽  
Author(s):  
Shuo-Ying Yang ◽  
Yaojia Wang ◽  
Brenden R. Ortiz ◽  
Defa Liu ◽  
Jacob Gayles ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Past Research ◽  
Frustrated Magnets ◽  
Range Magnetic Order ◽  
Magnetic Sublattice ◽  
Longitudinal Conductivity ◽  
Order Of Magnitude ◽  
Frustrated Magnet ◽  
Long Range Magnetic Order

The anomalous Hall effect (AHE) is one of the most fundamental phenomena in physics. In the highly conductive regime, ferromagnetic metals have been the focus of past research. Here, we report a giant extrinsic AHE in KV3Sb5, an exfoliable, highly conductive semimetal with Dirac quasiparticles and a vanadium Kagome net. Even without report of long range magnetic order, the anomalous Hall conductivity reaches 15,507 Ω−1 cm−1 with an anomalous Hall ratio of ≈ 1.8%; an order of magnitude larger than Fe. Defying theoretical expectations, KV3Sb5 shows enhanced skew scattering that scales quadratically, not linearly, with the longitudinal conductivity, possibly arising from the combination of highly conductive Dirac quasiparticles with a frustrated magnetic sublattice. This allows the possibility of reaching an anomalous Hall angle of 90° in metals. This observation raises fundamental questions about AHEs and opens new frontiers for AHE and spin Hall effect exploration, particularly in metallic frustrated magnets.

scholarly journals Anomalous Hall effect in ZnxFe3-xO4: Universal scaling law and electron localization below the Verwey transition

AIP Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 085208 ◽  
Author(s):  
N. Jedrecy ◽  
M. Hamieh ◽  
C. Hebert ◽  
M. Escudier ◽  
L. Becerra ◽  
...  
Keyword(s):  
Hall Effect ◽  
Scaling Law ◽  
Anomalous Hall Effect ◽  
Electron Localization ◽  
Verwey Transition ◽  
Universal Scaling

A Scaling Relation of Anomalous Hall Effect in Ferromagnetic Semiconductors and Metals

2007 ◽  
Vol 46 (No. 26) ◽  
pp. L642-L644 ◽  
Author(s):  
Tomoteru Fukumura ◽  
Hidemi Toyosaki ◽  
Kazunori Ueno ◽  
Masaki Nakano ◽  
Takashi Yamasaki ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Ferromagnetic Semiconductors ◽  
Scaling Relation

scholarly journals Charge transport in manganites: Hopping conduction, the anomalous Hall effect, and universal scaling

2001 ◽  
Vol 63 (18) ◽  
Author(s):  
Y. Lyanda-Geller ◽  
S. H. Chun ◽  
M. B. Salamon ◽  
P. M. Goldbart ◽  
P. D. Han ◽  
...  
Keyword(s):  
Charge Transport ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Hopping Conduction ◽  
Universal Scaling

Room Temperature Ferromagnetism in Gadolinium-doped Gallium Nitride

MRS Advances ◽  
2018 ◽  
Vol 3 (3) ◽  
pp. 159-164 ◽  
Author(s):  
Vishal G. Saravade ◽  
Cameron H. Ferguson ◽  
Amirhossein Ghods ◽  
Chuanle Zhou ◽  
Ian T. Ferguson
Keyword(s):  
Magnetic Properties ◽  
Gallium Nitride ◽  
Hall Effect ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Organic Ligand ◽  
Anomalous Hall Effect ◽  
Longitudinal Conductivity ◽  
Metallic Conduction ◽  
The Relationship

ABSTRACTAnomalous Hall effect was observed at room temperature in MOCVD-grown GaGdN from a (TMHD)3Gd source, which can contain oxygen in its organic ligand. GaN, and GaGdN grown using a Cp3Gd precursor which does not contain oxygen only showed the ordinary Hall effect. This indicates that oxygen could have a role in magnetic properties of GaGdN. The relationship between the anomalous Hall conductivity and longitudinal conductivity indicated that metallic conduction, hopping of carriers, and scattering-independent mechanisms are likely responsible for the ferromagnetism. However, this still requires further clarification.

Sign in / Sign up

Export Citation Format

Share Document