scholarly journals Angle dependence of Andreev scattering at semiconductor–superconductor interfaces

1999 ◽  
Vol 59 (15) ◽  
pp. 10176-10182 ◽  
Author(s):  
Niels Asger Mortensen ◽  
Karsten Flensberg ◽  
Antti-Pekka Jauho
Author(s):  
T. Oikawa ◽  
M. Inoue ◽  
T. Honda ◽  
Y. Kokubo

EELS allows us to make analysis of light elements such as hydrogen to heavy elements of microareas on the specimen. In energy loss spectra, however, elemental signals ride on a high background; therefore, the signal/background (S/B) ratio is very low in EELS. A technique which collects the center beam axial-symmetrically in the scattering angle is generally used to obtain high total intensity. However, the technique collects high background intensity together with elemental signals; therefore, the technique does not improve the S/B ratio. This report presents the experimental results of the S/B ratio measured as a function of the scattering angle and shows the possibility of the S/B ratio being improved in the high scattering angle range.Energy loss spectra have been measured using a JEM-200CX TEM with an energy analyzer ASEA3 at 200 kV.Fig.l shows a typical K-shell electron excitation edge riding on background in an energy loss spectrum.


2005 ◽  
Author(s):  
Justin J. Hwu ◽  
Homayoun Kiamanesh ◽  
Sukhbir Dulay ◽  
Peter Wilkens

2000 ◽  
Vol 341-348 ◽  
pp. 761-762 ◽  
Author(s):  
K. Haese ◽  
B. Holzapfel ◽  
L. Schultz

Sign in / Sign up

Export Citation Format

Share Document