Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices

1998 ◽  
Vol 58 (23) ◽  
pp. 15378-15380 ◽  
Author(s):  
H. Mohseni ◽  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Auger Recombination ◽  
Type Ii

Mechanism of suppression of Auger recombination processes in type‐II heterostructures

1995 ◽  
Vol 67 (18) ◽  
pp. 2681-2683 ◽  
Author(s):  
Georgy G. Zegrya ◽  
Aleksey D. Andreev
Keyword(s):  
Auger Recombination ◽  
Type Ii ◽  
Recombination Processes

Temperature and carrier density dependence of Auger recombination in a 3.4 µm InAs/GaSb/AlSb type-II laser device

2002 ◽  
Vol 17 (10) ◽  
pp. 1115-1122 ◽  
Author(s):  
J O Drumm ◽  
B Vogelgesang ◽  
G Hoffmann ◽  
C Schwender ◽  
N Herhammer ◽  
...  
Keyword(s):  
Density Dependence ◽  
Carrier Density ◽  
Auger Recombination ◽  
Type Ii ◽  
Laser Device

scholarly journals Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

2015 ◽  
Vol 107 (26) ◽  
pp. 261104 ◽  
Author(s):  
B. V. Olson ◽  
C. H. Grein ◽  
J. K. Kim ◽  
E. A. Kadlec ◽  
J. F. Klem ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Type Ii ◽  
Long Wave ◽  
Type Ii Superlattices ◽  
Long Wave Infrared

Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures

1997 ◽  
Author(s):  
Yury P. Yakovlev ◽  
Tamara N. Danilova ◽  
Albert N. Imenkov ◽  
Maya P. Mikhailova ◽  
Konstantin D. Moiseev ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Diode Lasers ◽  
Type Ii

Room Temperature led's for the MID-Infrared Based on in(AS,SB) Strained Layer Superlattices

1996 ◽  
Vol 450 ◽  
Author(s):  
C. C. Phillips ◽  
P. J. P. Tang ◽  
M. J. Puliin ◽  
H. R. Hardaway ◽  
S. J. Chung ◽  
...  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Type Ii ◽  
Time Resolved ◽  
Mid Infrared ◽  
Strained Layer ◽  
Carrier Confinement ◽  
Strained Layer Superlattices

ABSTRACTArsenic-rich InAs/InAs1−x Sbx strained-layer superlattices (SLS's) are studied in time-resolved optical, and CW magneto-optical spectroscopies. A pronounced type-II offset, with electrons confined to the alloy layers, is found. High radiative efficiencies at wavelengths well into the mid-IR, and the suppression of Auger recombination yield LED's operating at 3–10 μm. Present room temperature powers are ∼30 μW, probably limited by inadequate carrier confinement.

Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

2016 ◽  
Vol 119 (21) ◽  
pp. 215705 ◽  
Author(s):  
Y. Aytac ◽  
B. V. Olson ◽  
J. K. Kim ◽  
E. A. Shaner ◽  
S. D. Hawkins ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Auger Recombination ◽  
Type Ii ◽  
Type Ii Superlattices
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