Room Temperature led's for the MID-Infrared Based on in(AS,SB) Strained Layer Superlattices

1996 ◽  
Vol 450 ◽  
Author(s):  
C. C. Phillips ◽  
P. J. P. Tang ◽  
M. J. Puliin ◽  
H. R. Hardaway ◽  
S. J. Chung ◽  
...  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Type Ii ◽  
Time Resolved ◽  
Mid Infrared ◽  
Strained Layer ◽  
Carrier Confinement ◽  
Strained Layer Superlattices

ABSTRACTArsenic-rich InAs/InAs1−x Sbx strained-layer superlattices (SLS's) are studied in time-resolved optical, and CW magneto-optical spectroscopies. A pronounced type-II offset, with electrons confined to the alloy layers, is found. High radiative efficiencies at wavelengths well into the mid-IR, and the suppression of Auger recombination yield LED's operating at 3–10 μm. Present room temperature powers are ∼30 μW, probably limited by inadequate carrier confinement.

scholarly journals InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

2018 ◽  
Vol 51 (7) ◽  
pp. 075103 ◽  
Author(s):  
J A Keen ◽  
D Lane ◽  
M Kesaria ◽  
A R J Marshall ◽  
A Krier
Keyword(s):  
Type Ii ◽  
Mid Infrared ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

2018 ◽  
Vol 93 ◽  
pp. 375-380 ◽  
Author(s):  
J.A. Keen ◽  
E. Repiso ◽  
Q. Lu ◽  
M. Kesaria ◽  
A.R.J. Marshall ◽  
...  
Keyword(s):  
Type Ii ◽  
Mid Infrared ◽  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Space-charge effects in type-II strained layer superlattices

1998 ◽  
Vol 184-185 ◽  
pp. 728-731 ◽  
Author(s):  
I.V. Bradley ◽  
J.P. Creasey ◽  
K.P. O'Donnell
Keyword(s):  
Space Charge ◽  
Type Ii ◽  
Space Charge Effects ◽  
Charge Effects ◽  
Strained Layer ◽  
Strained Layer Superlattices

Photo-induced screening of the excitonic interaction in ZnSe-ZnTe type II strained-layer superlattices

1994 ◽  
Vol 138 (1-4) ◽  
pp. 868-872 ◽  
Author(s):  
B. Gil ◽  
T. Cloitre ◽  
N. Briot ◽  
O. Briot ◽  
P. Boring ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Transition levels of intrinsic defects in type-II InAs/InAs0.5Sb0.5 strained-layer superlattices

2019 ◽  
Vol 115 (15) ◽  
pp. 152104
Author(s):  
Maosheng Miao ◽  
Nicholas Kioussis ◽  
Christoph H. Grein
Keyword(s):  
Type Ii ◽  
Intrinsic Defects ◽  
Strained Layer ◽  
Strained Layer Superlattices

Type I and type II stark ladder structure in Ga1−xInxAs  GaAs (x = 0.14) strained layer superlattices

1991 ◽  
Vol 10 (3) ◽  
pp. 295-299 ◽  
Author(s):  
M.K. Saker ◽  
D.M. Whittaker ◽  
M.S. Skolnick ◽  
M.T. Emeny ◽  
C.R. Whitehouse
Keyword(s):  
Type I ◽  
Type Ii ◽  
Ladder Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

1999 ◽  
Vol 74 (16) ◽  
pp. 2384-2386 ◽  
Author(s):  
M. J. Pullin ◽  
H. R. Hardaway ◽  
J. D. Heber ◽  
C. C. Phillips ◽  
W. T. Yuen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Strained Layer ◽  
Carrier Confinement ◽  
Strained Layer Superlattice

Exciton binding energies and the valence-band offset in mixed type-I–type-II strained-layer superlattices

1992 ◽  
Vol 46 (3) ◽  
pp. 1557-1563 ◽  
Author(s):  
P. Peyla ◽  
Y. Merle d’Aubigné ◽  
A. Wasiela ◽  
R. Romestain ◽  
H. Mariette ◽  
...  
Keyword(s):  
Valence Band ◽  
Mixed Type ◽  
Binding Energies ◽  
Band Offset ◽  
Type I ◽  
Type Ii ◽  
Valence Band Offset ◽  
Strained Layer ◽  
Strained Layer Superlattices
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