Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

2016 ◽  
Vol 119 (21) ◽  
pp. 215705 ◽  
Author(s):  
Y. Aytac ◽  
B. V. Olson ◽  
J. K. Kim ◽  
E. A. Shaner ◽  
S. D. Hawkins ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Auger Recombination ◽  
Type Ii ◽  
Type Ii Superlattices

scholarly journals Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

2015 ◽  
Vol 107 (26) ◽  
pp. 261104 ◽  
Author(s):  
B. V. Olson ◽  
C. H. Grein ◽  
J. K. Kim ◽  
E. A. Kadlec ◽  
J. F. Klem ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Type Ii ◽  
Long Wave ◽  
Type Ii Superlattices ◽  
Long Wave Infrared

Effect of built-in electric field on the temperature dependence of transition energy for InP/GaAs type-II superlattices

2011 ◽  
Vol 110 (12) ◽  
pp. 123523 ◽  
Author(s):  
S. D. Singh ◽  
S. Porwal ◽  
A. K. Srivastava ◽  
T. K. Sharma ◽  
S. M. Oak
Keyword(s):  
Electric Field ◽  
Temperature Dependence ◽  
Transition Energy ◽  
Type Ii ◽  
Type Ii Superlattices

Electroabsorption in the type II superlattices

1992 ◽  
Vol 60 (16) ◽  
pp. 1969-1971 ◽  
Author(s):  
Shaozhong Li ◽  
Jacob B. Khurgin
Keyword(s):  
Type Ii ◽  
Type Ii Superlattices

Temperature Dependence of the Intervalley Deformation Potential of GaAs/AlAs Superlattices Under Hydrostatic Pressure

1997 ◽  
Vol 499 ◽  
Author(s):  
S. Guha ◽  
Q. Cai ◽  
M. Chandrasekhar ◽  
H. R. Chandrasekhar ◽  
Hyunjung Kim ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Temperature Dependence ◽  
Pressure Dependence ◽  
Type I ◽  
Type Ii ◽  
Deformation Potential ◽  
Intervalley Scattering

ABSTRACTWe have studied the pressure dependence of the type-I and type-II transitions in (GaAs)m/(AlAs)m superlattices by photoluminescence (PL) spectroscopy. From the study of PL linewidths of the type-I exciton as a function of pressure and temperature, we determine the intervalley deformation potential. Beyond the type-I and type-II crossover, the PL linewidth increases both as a function of pressure and temperature. We find that the electron-phonon deformation potential for Γ-X intervalley scattering varies with temperature.

Impact of Be-doping on the material properties of InAs/InAsSb type-II superlattices for infrared detection

2013 ◽  
Author(s):  
Elizabeth H. Steenbergen ◽  
Said Elhamri ◽  
T. J. Asel ◽  
William C. Mitchel ◽  
Sarah T. Hierath ◽  
...  
Keyword(s):  
Material Properties ◽  
Infrared Detection ◽  
Type Ii ◽  
Type Ii Superlattices
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