scholarly journals Localization length at the resistivity minima of the quantum Hall effect

1998 ◽  
Vol 57 (8) ◽  
pp. 4614-4627 ◽  
Author(s):  
M. M. Fogler ◽  
A. Yu. Dobin ◽  
B. I. Shklovskii
1992 ◽  
Vol 06 (01) ◽  
pp. 1-8 ◽  
Author(s):  
S. KOCH ◽  
R.J. HAUG ◽  
K. v. KLITZING ◽  
K. PLOOG

The critical exponent ν of the localization length in the integral quantum Hall regime can be measured directly using small Hall-bar geometries with different sizes. We obtain a universal behaviour for the three lowest Landau levels. This is in agreement with the universality prediction of the field-theoretic approach to the metal-insulator-transition in the quantum Hall effect. The value of ν=2.3±0.1 agrees with recent numerical studies for the lowest Landau level. We review recent experimental findings on the basis of these results and discuss the situation in Landau levels where spin-splitting is not resolved.


1996 ◽  
Vol 10 (17) ◽  
pp. 801-808 ◽  
Author(s):  
X.C. XIE ◽  
D.Z. LIU ◽  
J.K. JAIN

In the composite fermion model of the fractional quantum Hall effect, composite fermions experience, in addition to the usual potential disorder, also a magnetic flux disorder. Motivated by this, we investigate the localization properties of a single fermion in two dimensions, moving in the presence of both static potential and static magnetic flux disorders, but with a non-zero average magnetic field. It is found that the exponent characterizing the divergence of the localization length is not changed upon the addition of the flux disorder, provided it is not too large.


1994 ◽  
Vol 08 (07) ◽  
pp. 801-807 ◽  
Author(s):  
I.L. Aleiner ◽  
B.I. Shklovskii

New theory of the width of the peaks of the diagonal conductivity in the quantum Hall effect suggested recently by Polyakov and Shklovskii is extended to describe the peak widths of attenuation of the surface acoustic waves (SAW). In contrast to electromagnetic waves, wavelength of SAW can be smaller than the relevant localization length. This leads to a drastic increase of the peaks widths. The latter are shown to grow as (Ts(ω)/T1)0.4 where the effective temperature Ts is about 400ħω for GaAs.


2003 ◽  
Vol 02 (06) ◽  
pp. 559-564
Author(s):  
N. G. KALUGIN ◽  
B. E. SAĞOL ◽  
C. STELLMACH ◽  
A. BUß ◽  
A. HIRSCH ◽  
...  

We present a simple relaxation oscillator based on a quantum Hall device with Corbino geometry near the breakdown of the quantum Hall effect. The amplitude of the observed relaxation oscillations is found many times bigger than one can expect from the hysteresis of the quantum Hall effect breakdown, measured at constant currents. This result is explained by a dynamical suppression of hopping contribution to the conductivity σxx, and corresponding dynamical reduction of localization length ξ.


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