scholarly journals Electronic transport and the localization length in the quantum Hall effect

1998 ◽  
Vol 57 (23) ◽  
pp. 14818-14828 ◽  
Author(s):  
M. Furlan
1992 ◽  
Vol 06 (01) ◽  
pp. 1-8 ◽  
Author(s):  
S. KOCH ◽  
R.J. HAUG ◽  
K. v. KLITZING ◽  
K. PLOOG

The critical exponent ν of the localization length in the integral quantum Hall regime can be measured directly using small Hall-bar geometries with different sizes. We obtain a universal behaviour for the three lowest Landau levels. This is in agreement with the universality prediction of the field-theoretic approach to the metal-insulator-transition in the quantum Hall effect. The value of ν=2.3±0.1 agrees with recent numerical studies for the lowest Landau level. We review recent experimental findings on the basis of these results and discuss the situation in Landau levels where spin-splitting is not resolved.


1996 ◽  
Vol 10 (17) ◽  
pp. 801-808 ◽  
Author(s):  
X.C. XIE ◽  
D.Z. LIU ◽  
J.K. JAIN

In the composite fermion model of the fractional quantum Hall effect, composite fermions experience, in addition to the usual potential disorder, also a magnetic flux disorder. Motivated by this, we investigate the localization properties of a single fermion in two dimensions, moving in the presence of both static potential and static magnetic flux disorders, but with a non-zero average magnetic field. It is found that the exponent characterizing the divergence of the localization length is not changed upon the addition of the flux disorder, provided it is not too large.


1998 ◽  
Vol 57 (8) ◽  
pp. 4614-4627 ◽  
Author(s):  
M. M. Fogler ◽  
A. Yu. Dobin ◽  
B. I. Shklovskii

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