Magneto-optical investigations of dilutedCd1−xMnxSmagnetic semiconductors in theB-exciton region

1997 ◽  
Vol 56 (4) ◽  
pp. 1868-1875 ◽  
Author(s):  
Yu. G. Semenov ◽  
V. G. Abramishvili ◽  
A. V. Komarov ◽  
S. M. Ryabchenko
Keyword(s):  
Exciton Region

SELF-TRAPPED EXCITONS IN ORTHORHOMBIC SnBr2

2001 ◽  
Vol 15 (28n30) ◽  
pp. 4009-4012 ◽  
Author(s):  
Y. YAMASAKI ◽  
N. OHNO
Keyword(s):  
Time Dependence ◽  
Low Temperatures ◽  
Luminescence Band ◽  
Radiative Decay ◽  
Time Resolved ◽  
Tunneling Recombination ◽  
Exciton Region ◽  
Time Resolved Photoluminescence ◽  
Stokes Shifts ◽  
2.5 Ev Luminescence

Luminescence properties of SnBr 2 have been studied to reveal the photo-excited exciton relaxation process. Two types of luminescence with large Stokes shifts are found at low temperatures; the 2.2-eV luminescence band produced under the photo-excitation in the first exciton region, and the 2.5-eV luminescence band stimulated by photons with energies above the bandgap. The time-resolved photoluminescence measurements have revealed that the 2.2-eV luminescence comprises fast (1.2 μs) and slow (6.4 μs) exponential decay components, whereas the 2.5-eV luminescence shows the time dependence of I(t)∞ t-0.9. These results suggest that the former band is attributed to the radiative decay of self-trapped excitons, and the latter band would originate from tunneling recombination of holes with the STEL as in the case of lead halides.

Reflection Spectra of PbCl2in the Exciton Region

1976 ◽  
Vol 41 (3) ◽  
pp. 942-949 ◽  
Author(s):  
Jun-ichiro Kanbe ◽  
Hideo Takezoe ◽  
Ryumyo Onaka
Keyword(s):  
Reflection Spectra ◽  
Exciton Region

Dispersion of nonlinear optical susceptibility of GaAs/AlxGa1−xAs multiple quantum wells in the exciton region

1990 ◽  
Vol 42 (8) ◽  
pp. 5117-5119 ◽  
Author(s):  
Zheng-hao Chen ◽  
Yuan-lin Xie ◽  
Shi-jie Gu ◽  
Yue-liang Zhou ◽  
Da-fu Cui ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nonlinear Optical ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Nonlinear Optical Susceptibility ◽  
Optical Susceptibility ◽  
Exciton Region

Fine Structure in the Free Exciton Region of the Emission Spectrum of γ-InSe

1987 ◽  
Vol 143 (2) ◽  
pp. 741-748 ◽  
Author(s):  
K. M. Paraskevopoulos ◽  
C. Julien ◽  
M. Balkanski
Keyword(s):  
Fine Structure ◽  
Emission Spectrum ◽  
Free Exciton ◽  
Exciton Region

Nonlinear phenomena and multiphonon transitions in the exciton region of a spectrum

1990 ◽  
Vol 148 (3-4) ◽  
pp. 204-206 ◽  
Author(s):  
M.P. Lisitsa ◽  
R.A. Taratuta ◽  
A.M. Yaremko
Keyword(s):  
Nonlinear Phenomena ◽  
Exciton Region

Luminescence Of A New Material: GaN Grown On NdGaO3

1997 ◽  
Vol 482 ◽  
Author(s):  
K. P. Korona ◽  
K. Pakula ◽  
A. Wysmolek ◽  
J. M. Baranowski ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Point Defects ◽  
Radiative Recombination ◽  
High Electrical Conductivity ◽  
High Oxygen Concentration ◽  
Electron Hole ◽  
New Material ◽  
Exciton Region ◽  
Pl Emission ◽  
Very High ◽  
Hole Recombination

AbstractIt is shown that heteroepitaxial GaN layers grown on NdGaO3, in spite of a very high conductivity (˜ 10 Ω−1cm−1) have very efficient luminescence properties. It is shown that a high electrical conductivity is caused by contamination of GaN layers with oxygen. Efficient emission due to donor bound excitons (at hv = 3.475 eV), free excitons and free electron – hole recombination have been identified. The total PL emission in the exciton region exceeds the intensity from the homoepitaxial GaN layers. It is argued that a high oxygen concentration eliminates nonradiative channels connected with point defects, leading to efficient radiative recombination.

Optical spectra of thallous halides in 5d core exciton region

1996 ◽  
Vol 79 ◽  
pp. 59-62 ◽  
Author(s):  
M. Fujita ◽  
N. Ohno ◽  
Y. Kiyama ◽  
K. Nakamura
Keyword(s):  
Optical Spectra ◽  
Exciton Region
Sign in / Sign up

Export Citation Format

Share Document