Luminescence Of A New Material: GaN Grown On NdGaO3
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AbstractIt is shown that heteroepitaxial GaN layers grown on NdGaO3, in spite of a very high conductivity (˜ 10 Ω−1cm−1) have very efficient luminescence properties. It is shown that a high electrical conductivity is caused by contamination of GaN layers with oxygen. Efficient emission due to donor bound excitons (at hv = 3.475 eV), free excitons and free electron – hole recombination have been identified. The total PL emission in the exciton region exceeds the intensity from the homoepitaxial GaN layers. It is argued that a high oxygen concentration eliminates nonradiative channels connected with point defects, leading to efficient radiative recombination.
1978 ◽
Vol 21
(11-12)
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pp. 1413-1417
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1980 ◽
Vol 11
(5)
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pp. 41-42
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1999 ◽
Vol 40
(4-5)
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pp. 123-130
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2021 ◽
Vol 12
(2)
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pp. 835-842
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