Excitonic properties of weakly coupled GaAs single quantum wells investigated with high-resolution photoluminescence excitation spectroscopy

1997 ◽  
Vol 56 (20) ◽  
pp. 13321-13325 ◽  
Author(s):  
L. Schrottke ◽  
H. T. Grahn ◽  
K. Fujiwara
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Photoluminescence Excitation ◽  
Single Quantum ◽  
Weakly Coupled ◽  
Excitonic Properties

Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells

2006 ◽  
Vol 3 (6) ◽  
pp. 2001-2004 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
M. J. Godfrey ◽  
M. J. Kappers ◽  
J. S. Barnard ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Excitation ◽  
Single Quantum

Normalized reflection spectra in GaAs/InxGa1−xAs single quantum wells: Structure characterizations and excitonic properties

1995 ◽  
Vol 52 (15) ◽  
pp. 10713-10716 ◽  
Author(s):  
A. D’Andrea ◽  
N. Tomassini ◽  
L. Ferrari ◽  
M. Righini ◽  
S. Selci ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Reflection Spectra ◽  
Single Quantum ◽  
Excitonic Properties

Submicron Scale Interface Roughness in Quantum Wells Observed by High-Resolution Cathodoluminescence Microscopy

1992 ◽  
Vol 280 ◽  
Author(s):  
Tom Murashita ◽  
Kazumi Wada ◽  
Kiyoshi Kanisawa ◽  
Naohisa Inoue
Keyword(s):  
Growth Rate ◽  
High Resolution ◽  
Quantum Wells ◽  
High Substrate Temperature ◽  
Interface Roughness ◽  
Thickness Variation ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Smooth Interface ◽  
Submicron Scale

ABSTRACTA single quantum well (SQW) is grown at a high substrate temperature and low growth rate (HTLR growth) in order to reduce interface roughness. The lateral well thickness variation in the SQW is characterized by the cathodolumincscence microscopy. It is clarified that HTLR growth can be applied to make a smooth interface for advanced devices.

Photoluminescence Excitation Spectroscopy of Strained Ingaas/GaAs Quantum Wells

1989 ◽  
Vol 160 ◽  
Author(s):  
Emil S. Koteles ◽  
D. Owens ◽  
B. Elman ◽  
P. Melman ◽  
D. Bertolet ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Quantum Wells ◽  
Device Fabrication ◽  
Photoluminescence Excitation ◽  
Single Quantum ◽  
Indium Composition ◽  
Special Sample Preparation ◽  
Lattice Matched ◽  
Processing Steps ◽  
Exciton Transitions

AbstractPhotoluminescence excitation spectroscopy of exciton transitions has been utilized to obtain information about light-holes in strained InGaAs/GaAs single quantum wells. By monitoring their behavior with respect to that of heavy-holes, it was shown possible to ascertain whether or not the quantum wells were pseudomorphic (lattice matched but strained) or relaxed and, if strained, the magnitude of strain present. Thus the indium composition of the single QW layers was deduced. This method is advantageous since it is nondestructive, requires no special sample preparation, is accurate and can readily be extended to monitoring strain in QWs subjected to various processing steps associated with device fabrication.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field
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