Theoretical model for early stages of porous silicon formationfrom n- and p-type silicon substrates

1997 ◽  
Vol 55 (15) ◽  
pp. 9706-9715 ◽  
Author(s):  
Alexandre Valance
Keyword(s):  
Theoretical Model ◽  
Porous Silicon ◽  
Silicon Substrates ◽  
Early Stages ◽  
Type Silicon ◽  
P Type

Development of Silicon-Based UV-Photodetector Prototypes using Photoluminescent Nanocrystalline Silicon Overlayers

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Porous Silicon ◽  
Active Zone ◽  
Silicon Detector ◽  
Nanocrystalline Silicon ◽  
Incident Radiation ◽  
Enhancement Effect ◽  
Type Silicon ◽  
Quantum Confinement Effects ◽  
Si Films ◽  
P Type

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

ESR Study of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
W. Y. Cheung ◽  
S. P. Wong ◽  
I. H. Wilson ◽  
C. F. Kan ◽  
S. K. Hark
Keyword(s):  
Porous Silicon ◽  
Spin Density ◽  
Light Emission ◽  
Blue Shift ◽  
Esr Spectra ◽  
Peak Position ◽  
Silicon Substrates ◽  
Post Annealing ◽  
G Value ◽  
P Type

ABSTRACTA detailed ESR study has been performed on porous silicon on both <100> and <111> p-type silicon substrates prepared using anodization in HF under a range of conditions and the results are correlated with the light emission properties. It is found that the ESR spectra are dependent upon the orientation of the samples. The ESR defect centers are identified to be the Pb centers or Pbo centers of the Si-SiO2 system from the g-value anisotropy maps. The variation of the spin density Ns with annealing conditions has also been studied for samples annealed either in nitrogen or oxygen ambient at 200°C for various time intervals. It is concluded that the increase or decrease of Ns are due to the generation or elimination of the Pb or Pbo centers in conjunction with the oxidation process during annealing. From PL study of these samples, it is found that there is no simple correlation between the spin density and the PL intensity. However, a blue shift in the PL peak position was observed both in samples after a post-annealing etch in HF solution, and in samples annealed in oxygen without a post-annealing etch. This blue shift supports the quantum confinement model of light emission from porous silicon.

FEATURES OF P-TYPE SILICON COMBUSTION IN THE SOLID FUEL PSI-NACLO4 · H2O COMPOSITES

2020 ◽  
Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
P. N. KRIVOSHEYEV ◽  
Y. A. BARANYSHYN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Solid Fuel ◽  
Type Silicon ◽  
Oxidative Reactions ◽  
P Type ◽  
Propagation Velocities

The ability of porous silicon to actively participate in oxidative reactions leading to combustion and explosion when interacting with reagents in the pores was established about twenty years ago [1] but because of the high propagation velocities of these physicochemical transformations (102-103 m/s), it was di©cult to understand their mechanisms.

Photodefined etching of n+ layers diffused on p-type silicon substrates

1999 ◽  
Vol 138-139 ◽  
pp. 29-34
Author(s):  
R.S Videira ◽  
R.M Gamboa ◽  
J.Maia Alves ◽  
J.M Serra ◽  
A.M Vallera
Keyword(s):  
Silicon Substrates ◽  
Type Silicon ◽  
P Type

Application of porous silicon formation selectivity to impurity profiling inp‐type silicon substrates

1989 ◽  
Vol 66 (8) ◽  
pp. 3814-3819 ◽  
Author(s):  
M. Ligeon ◽  
F. Muller ◽  
R. Herino ◽  
F. Gaspard ◽  
A. Halimaoui ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Substrates ◽  
Type Silicon ◽  
Impurity Profiling ◽  
Formation Selectivity

Scanning Electrochemical Microscopy Investigations of Monolayers Bound to p-Type Silicon Substrates

2006 ◽  
Vol 78 (17) ◽  
pp. 6019-6025 ◽  
Author(s):  
Jalal Ghilane ◽  
Fanny Hauquier ◽  
Bruno Fabre ◽  
Philippe Hapiot
Keyword(s):  
Scanning Electrochemical Microscopy ◽  
Silicon Substrates ◽  
Type Silicon ◽  
P Type ◽  
Electrochemical Microscopy

Charge Exchange Mechanism Responsible for P‐Type Silicon Dissolution during Porous Silicon Formation

1989 ◽  
Vol 136 (10) ◽  
pp. 3043-3046 ◽  
Author(s):  
F. Gaspard ◽  
A. Bsiesy ◽  
M. Ligeon ◽  
F. Muller ◽  
R. Herino
Keyword(s):  
Porous Silicon ◽  
Charge Exchange ◽  
Exchange Mechanism ◽  
Type Silicon ◽  
P Type ◽  
Silicon Dissolution
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