Self-organization of highly ordered mosaic structure of porous silicon at long anodic etching of p-type silicon in the electrolyte with internal current source

2011 ◽  
Author(s):  
Kurbangali B. Tynyshtykbaev
Keyword(s):  
Porous Silicon ◽  
Current Source ◽  
Mosaic Structure ◽  
Self Organization ◽  
Anodic Etching ◽  
Type Silicon ◽  
P Type

Dynamics of formation of the mosaic structure of porous silicon during prolonged anodic etching in electrolytes with an internal current source

2011 ◽  
Vol 53 (8) ◽  
pp. 1575-1580 ◽  
Author(s):  
K. B. Tynyshtykbaev ◽  
Yu. A. Ryabikin ◽  
K. A. Mit’ ◽  
B. A. Rakymetov ◽  
T. Aitmukan
Keyword(s):  
Porous Silicon ◽  
Current Source ◽  
Mosaic Structure ◽  
Anodic Etching

Development of Silicon-Based UV-Photodetector Prototypes using Photoluminescent Nanocrystalline Silicon Overlayers

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Porous Silicon ◽  
Active Zone ◽  
Silicon Detector ◽  
Nanocrystalline Silicon ◽  
Incident Radiation ◽  
Enhancement Effect ◽  
Type Silicon ◽  
Quantum Confinement Effects ◽  
Si Films ◽  
P Type

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

FEATURES OF P-TYPE SILICON COMBUSTION IN THE SOLID FUEL PSI-NACLO4 · H2O COMPOSITES

2020 ◽  
Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
P. N. KRIVOSHEYEV ◽  
Y. A. BARANYSHYN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Solid Fuel ◽  
Type Silicon ◽  
Oxidative Reactions ◽  
P Type ◽  
Propagation Velocities

The ability of porous silicon to actively participate in oxidative reactions leading to combustion and explosion when interacting with reagents in the pores was established about twenty years ago [1] but because of the high propagation velocities of these physicochemical transformations (102-103 m/s), it was di©cult to understand their mechanisms.

Morphology of porous silicon under long anodic etching in electrolyte with internal current source

2010 ◽  
Vol 36 (6) ◽  
pp. 538-540 ◽  
Author(s):  
K. B. Tynyshtykbaev ◽  
Yu. A. Ryabikin ◽  
S. Zh. Tokmoldin ◽  
T. Aitmukan ◽  
B. A. Rakhymetov ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Current Source ◽  
Anodic Etching

Charge Exchange Mechanism Responsible for P‐Type Silicon Dissolution during Porous Silicon Formation

1989 ◽  
Vol 136 (10) ◽  
pp. 3043-3046 ◽  
Author(s):  
F. Gaspard ◽  
A. Bsiesy ◽  
M. Ligeon ◽  
F. Muller ◽  
R. Herino
Keyword(s):  
Porous Silicon ◽  
Charge Exchange ◽  
Exchange Mechanism ◽  
Type Silicon ◽  
P Type ◽  
Silicon Dissolution

scholarly journals Photoluminescence of Por-Si with High-ordered Mosaic Structure Received at Long Anodic Etching p-Si (100) in the Electrolyte with an Internal Current Source

2013 ◽  
Vol 03 (02) ◽  
pp. 217-221 ◽  
Author(s):  
K. B. Tynyshtykbaev ◽  
V. B. Glazman ◽  
M. A. Yeleuov ◽  
A. T. Isova ◽  
B. A. Rakymetov ◽  
...  
Keyword(s):  
Current Source ◽  
Mosaic Structure ◽  
Anodic Etching
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