Spin-orbit splitting of electronic states in semiconductor asymmetric quantum wells

1997 ◽  
Vol 55 (24) ◽  
pp. 16293-16299 ◽  
Author(s):  
E. A. de Andrada e Silva ◽  
G. C. La Rocca ◽  
F. Bassani
Keyword(s):  
Quantum Wells ◽  
Electronic States ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting ◽  
Asymmetric Quantum

scholarly journals Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms

2019 ◽  
Vol 110 ◽  
pp. 95-99 ◽  
Author(s):  
G.M. Minkov ◽  
V. Ya. Aleshkin ◽  
O.E. Rut ◽  
A.A. Sherstobitov ◽  
A.V. Germanenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting

Analysis of Wurtzite GaN/AlGaN Quantum Well Lasers from First-Principles Calculations

1995 ◽  
Vol 395 ◽  
Author(s):  
T. Uenoyama ◽  
M. Suzuki
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
First Principles ◽  
Optical Gain ◽  
Quantum Well Lasers ◽  
First Principles Calculation ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Large Hole ◽  
Spin Orbit Splitting

ABSTRACTOptical gain of wurtzite GaN/AlGaN quantum wells has been studied from a first-principles calculation using the k • p method. Most of the parameters in the k • p method were determined by fitting the band structures by the first-principles calculation. Owing to the small spin-orbit splitting energies of the wurtzite GaN and AIN, the optical gain has been calculated using the 6×6 Hamiltonian for the valence band. It is found that the large hole effective masses and the small spin-orbit splitting cause the higher threshold current density of wurtzite GaN/AlGaN quantum well lasers.

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