Analysis of Wurtzite GaN/AlGaN Quantum Well Lasers from First-Principles Calculations

1995 ◽  
Vol 395 ◽  
Author(s):  
T. Uenoyama ◽  
M. Suzuki

ABSTRACTOptical gain of wurtzite GaN/AlGaN quantum wells has been studied from a first-principles calculation using the k • p method. Most of the parameters in the k • p method were determined by fitting the band structures by the first-principles calculation. Owing to the small spin-orbit splitting energies of the wurtzite GaN and AIN, the optical gain has been calculated using the 6×6 Hamiltonian for the valence band. It is found that the large hole effective masses and the small spin-orbit splitting cause the higher threshold current density of wurtzite GaN/AlGaN quantum well lasers.

2020 ◽  
Vol 101 (23) ◽  
Author(s):  
I. V. Silkin ◽  
Yu. M. Koroteev ◽  
V. M. Silkin ◽  
E. V. Chulkov

2019 ◽  
Vol 110 ◽  
pp. 95-99 ◽  
Author(s):  
G.M. Minkov ◽  
V. Ya. Aleshkin ◽  
O.E. Rut ◽  
A.A. Sherstobitov ◽  
A.V. Germanenko ◽  
...  

2001 ◽  
Vol 13 (5) ◽  
pp. 851-858 ◽  
Author(s):  
V F Radantsev ◽  
A M Yafyasov ◽  
V B Bogevolnov ◽  
I M Ivankiv

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Suzuki ◽  
T. Uenoyama

AbstractSubband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k.p theory. First-principles calculations are used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance.


Sign in / Sign up

Export Citation Format

Share Document