Photoluminescence transient-decay study of the deep-donor bound-exciton-emission band in high-purity InP

1996 ◽  
Vol 53 (7) ◽  
pp. 3627-3629 ◽  
Author(s):  
R. Benzaquen ◽  
S. Charbonneau ◽  
R. Leonelli ◽  
A. P. Roth
Keyword(s):  
High Purity ◽  
Emission Band ◽  
Exciton Emission ◽  
Decay Study ◽  
Deep Donor

A new bound-exciton emission band in ZnSe crystals and multiplasmon optical transitions

1999 ◽  
Vol 41 (7) ◽  
pp. 1070-1074
Author(s):  
V. S. Vavilov ◽  
M. V. Chukichev ◽  
R. R. Rezvanov ◽  
A. A. Klyukanov ◽  
K. D. Sushkevich ◽  
...  
Keyword(s):  
Emission Band ◽  
Optical Transitions ◽  
Exciton Emission

scholarly journals Free and self-trapped exciton emission in perovskite CsPbBr3 microcrystals

RSC Advances ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 1035-1042
Author(s):  
Fang Pan ◽  
Jinrui Li ◽  
Xiaoman Ma ◽  
Yang Nie ◽  
Beichen Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Emission Band ◽  
Exciton Emission ◽  
Cvd Method

A broad STE emission band together with a FE emission was found at low temperature in a CsPbBr3 microcrystal sample prepared by CVD method.

Temperature dependence of the free-exciton-emission linewidth in high-purity InP

1995 ◽  
Vol 52 (4) ◽  
pp. R2273-R2276 ◽  
Author(s):  
R. Benzaquen ◽  
R. Leonelli ◽  
S. Charbonneau ◽  
P. J. Poole ◽  
A. P. Roth
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Free Exciton ◽  
Exciton Emission

Hydrogen passivation of deep donor centres in high-purity epitaxial GaAs

1982 ◽  
Vol 18 (16) ◽  
pp. 715 ◽  
Author(s):  
S.J. Pearton ◽  
A.J. Tavendale
Keyword(s):  
High Purity ◽  
Hydrogen Passivation ◽  
Epitaxial Gaas ◽  
Deep Donor

Evidence for associated deep donor-shallow acceptor pair recombination for the EL2 emission band in GaAs

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 173-175 ◽  
Author(s):  
B.V. Shanabrook ◽  
P.B. Klein ◽  
S.G. Bishop
Keyword(s):  
Emission Band ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
Deep Donor

Observations oh Nucleation and Growth of Voids in Nickel

1970 ◽  
Vol 28 ◽  
pp. 414-415
Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
B. Mastel
Keyword(s):  
High Purity ◽  
Growth Stage ◽  
Elevated Temperatures ◽  
Early Growth ◽  
Nucleation And Growth ◽  
Pure Nickel ◽  
Different Temperatures ◽  
Total Fluence ◽  
Neutron Exposure ◽  
Growth Of Voids

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.

Preparation and characterisation of vanadium pentoxide supported rhodium catalyst

1988 ◽  
Vol 46 ◽  
pp. 946-947
Author(s):  
A. Legrouri
Keyword(s):  
Aqueous Solution ◽  
Thermal Decomposition ◽  
Physicochemical Properties ◽  
Surface Area ◽  
Vanadium Pentoxide ◽  
High Purity ◽  
Gas Adsorption ◽  
Rhodium Catalyst ◽  
Optical Methods ◽  
Reducible Oxides

The industrial importance of metal catalysts supported on reducible oxides has stimulated considerable interest during the last few years. This presentation reports on the study of the physicochemical properties of metallic rhodium supported on vanadium pentoxide (Rh/V2O5). Electron optical methods, in conjunction with other techniques, were used to characterise the catalyst before its use in the hydrogenolysis of butane; a reaction for which Rh metal is known to be among the most active catalysts.V2O5 powder was prepared by thermal decomposition of high purity ammonium metavanadate in air at 400 °C for 2 hours. Previous studies of the microstructure of this compound, by HREM, SEM and gas adsorption, showed it to be non— porous with a very low surface area of 6m2/g3. The metal loading of the catalyst used was lwt%Rh on V2Q5. It was prepared by wet impregnating the support with an aqueous solution of RhCI3.3H2O.

High-purity Ge x-ray detectors: Sensitivity factors and usefulness

1990 ◽  
Vol 48 (2) ◽  
pp. 548-548
Author(s):  
E. B. Steel
Keyword(s):  
High Purity ◽  
High Energy ◽  
Quantitative Chemical Analysis ◽  
Detector Performance ◽  
X Ray ◽  
Detector Sensitivity ◽  
Specimen Holder ◽  
Many Instruments ◽  
Charge Resolution ◽  
Sensitivity Factors

High Purity Germanium (HPGe) x-ray detectors are now commercially available for the analytical electron microscope (AEM). The detectors have superior efficiency at high x-ray energies and superior resolution compared to traditional lithium-drifted silicon [Si(Li)] detectors. However, just as for the Si(Li), the use of the HPGe detectors requires the determination of sensitivity factors for the quantitative chemical analysis of specimens in the AEM. Detector performance, including incomplete charge, resolution, and durability has been compared to a first generation detector. Sensitivity factors for many elements with atomic numbers 10 through 92 have been determined at 100, 200, and 300 keV. This data is compared to Si(Li) detector sensitivity factors.The overall sensitivity and utility of high energy K-lines are reviewed and discussed. Many instruments have one or more high energy K-line backgrounds that will affect specific analytes. One detector-instrument-specimen holder combination had a consistent Pb K-line background while another had a W K-line background.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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