Stark broadening of impurity absorption lines by inhomogeneous electric fields in highly compensated germanium

1996 ◽  
Vol 53 (24) ◽  
pp. 16272-16278 ◽  
Author(s):  
Y. Harada ◽  
K. Fujii ◽  
T. Ohyama ◽  
K. M. Itoh ◽  
E. E. Haller
Keyword(s):  
Electric Fields ◽  
Absorption Lines ◽  
Stark Broadening ◽  
Impurity Absorption

EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICON

1967 ◽  
Vol 45 (8) ◽  
pp. 2695-2718 ◽  
Author(s):  
J. J. White
Keyword(s):  
Absorption Line ◽  
Excited States ◽  
Electric Fields ◽  
Stark Effect ◽  
Absorption Lines ◽  
Stark Broadening ◽  
Boron Doped ◽  
Stark Effects ◽  
Boron Acceptor ◽  
Neutral Acceptor

Effects of various electrical perturbations on the boron acceptor states in silicon were studied using low-temperature absorption-line measurements.A uniform external electric field was applied to compensated boron-doped silicon and the "Stark effect" on the boron acceptor absorption lines was observed. The Stark shifts of the excited states were quadratic in the applied field. The Stark broadening of the acceptor absorption lines was attributed to an unresolved partial removal of degeneracy of the excited states. The internal Coulomb fields of ionized impurities also perturb neutral acceptor transitions, resulting in (a) "ionized impurity broadening" of the absorption lines by the screened Coulomb fields of thermally ionized impurities in uncompensated Si(B) silicon at T > 50 °K and (b) "compensation effects" on the absorption lines by the unscreened Coulomb fields of compensationally ionized impurities in Si(B, P) silicon at 4 °K. Observations of these two internal Coulomb held effects are related to the external-field Stark effects. The theories of ionized impurity broadening are discussed briefly and the observed properties of a new absorption line due to compensation are reported.

Microwave spectroscopy of molecular ions in the laboratory and in space

1988 ◽  
Vol 324 (1578) ◽  
pp. 141-146 ◽  
Keyword(s):  
Electric Fields ◽  
Structural Parameters ◽  
Spectroscopic Studies ◽  
Molecular Ions ◽  
Stark Broadening ◽  
Giant Molecular Clouds ◽  
Vibrational States ◽  
Dark Cloud ◽  
Rotational Spectra ◽  
The Galaxy

The SO+ molecular ion has been detected radioastronomically via the J = §—*§ rotational transitions, whose rest frequencies were determined by earlier laboratory spectroscopic studies. This ion was detected in seven interstellar sources, including both giant molecular clouds and a cold dark cloud, and thus appears to be very widely distributed in the Galaxy and to play an important role in interstellar chemistry. We have obtained rotational spectra of HCO + in a wide variety of vibrational states in three isotopic forms, leading to the equilibrium structural parameters that are consistent to a high degree in redundant determinations. These results will be compared to similar structures we have obtained for HCN and HNC. The high bending vibrational states observed for HCO + and HCN exhibit the effects of Stark broadening due to the electric fields present in the discharge plasmas. The effects observed for ions against neutrals will be compared, as will those for normal glow discharges against those for magnetically confined abnormal discharges.

scholarly journals Direct Comparison of Electron Density Measurements in Laser-Created Plasmas Using Stark Broadening and Satellite Line Intensities

1984 ◽  
Vol 86 ◽  
pp. 242-245
Author(s):  
Ph. Alaterre ◽  
P. Audebert ◽  
J.P. Geindre ◽  
P. Monier ◽  
C. Popovics ◽  
...  
Keyword(s):  
Electron Density ◽  
Electric Fields ◽  
Second Harmonic ◽  
Pulse Length ◽  
Target Surface ◽  
Carbon Substrate ◽  
Stark Broadening ◽  
Satellite Line ◽  
Density Measurements ◽  
Line Intensities

Spectral line profiles, broadened mostly by Stark effects from electric fields produced by charge particles, and diélectronic satellite line intensities have recently been used for determining electron densities in the dense region of laser-created plasmas. We present here a direct comparison of electron density measurements in the conduction region of laser created plasmas on a plane target using these two techniques.Experiments were carried at the GRECO laser facility, using the Nd phosphate glass laser at its second harmonic (0.53 μm) and 600 ps pulse length. The laser was focused on a 160 μm focal spot in which was centered a 25 or 50 μm diameter aluminum dot implanted on a carbon substrate. Laser intensities were in the range 1 × 1014−3 × 1014 W/cm2. The ls4p−ls2 He-like transition, the 4p−ls H-like transition and the Ly c satellites were recorded on the same spectrum with a PET flat crystal spectrograph. Spot spectroscopy provided quasi-homogeneity and low reabsorption along the line of sight which was tilted 7° out the target surface. 3 μm resolution along the laser axis was obtained with an imaging knife-edge placed 1 mm apart from the target.

Effects of Resonant Phonon Interactions on Shapes of Impurity Absorption Lines

1969 ◽  
Vol 178 (3) ◽  
pp. 1252-1263 ◽  
Author(s):  
SERGIO RODRIGUEZ ◽  
THEODORE D. SCHULTZ
Keyword(s):  
Absorption Lines ◽  
Impurity Absorption
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