Theory of the Effect of Finite Crystal Size on the Frequencies and Intensities of Impurity Absorption Lines in Semiconductors

1971 ◽  
Vol 3 (6) ◽  
pp. 1999-2003 ◽  
Author(s):  
Bernard Bendow
Keyword(s):  
Crystal Size ◽  
Absorption Lines ◽  
Impurity Absorption

Effects of Resonant Phonon Interactions on Shapes of Impurity Absorption Lines

1969 ◽  
Vol 178 (3) ◽  
pp. 1252-1263 ◽  
Author(s):  
SERGIO RODRIGUEZ ◽  
THEODORE D. SCHULTZ
Keyword(s):  
Absorption Lines ◽  
Impurity Absorption

Stark broadening of impurity absorption lines by inhomogeneous electric fields in highly compensated germanium

1996 ◽  
Vol 53 (24) ◽  
pp. 16272-16278 ◽  
Author(s):  
Y. Harada ◽  
K. Fujii ◽  
T. Ohyama ◽  
K. M. Itoh ◽  
E. E. Haller
Keyword(s):  
Electric Fields ◽  
Absorption Lines ◽  
Stark Broadening ◽  
Impurity Absorption

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

Pengaruh Pendopingan Karbon Terhadap Struktur Kristal dan Morfologi TIO2

2019 ◽  
Vol 2 (2) ◽  
Author(s):  
Frastica Deswardani ◽  
Helga Dwi Fahyuan ◽  
Rimawanto Gultom ◽  
Eif Sparzinanda
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Grain Size ◽  
Tio2 Thin Film ◽  
Crystal Size ◽  
Diffraction Peak ◽  
Carbon Doping ◽  
Tio2 Anatase ◽  
Spray Method ◽  
Carbon Analysis

Telah dilakukan penelitian mengenai pengaruh konsentrasi doping karbon pada lapisan tipis TiO2 yang ditumbuhkan dengan metode spray terhadap struktur kristal dan morfologi TiO2. Hasil karakterisasi SEM menunjukkan bahwa penambahan doping karbon dapat meningkatkan ukuran butir. Lapisan TiO2 doping karbon 8% diperoleh ukuran butir terbesar adalah 1.35 μm, sedangkan ukuran tekecilnya adalah 0.45 μm. Sementara itu, untuk lapisan tipis TiO2 didoping karbon 15% memiliki ukuran butir terbesar yaitu 1.76 μm dan terkecil 0.9 μm. Hasil XRD menunjukkan seluruh puncak difraksi lapisan tipis TiO2 dengan doping karbon 8% dan 15% merupakan TiO2 anatase. Ukuran kristal lapisan TiO2 didoping karbon 8% diperoleh sebesar 638,08 Å dan untuk pendopingan 15% karbon ukuran kristal lapisan tipis TiO2 adalah 638,09 Å, hal ini menunjukkan ukuran kristal kedua sampel tidak mengalami perubahan yang signifikan.   TiO2 thin film with carbon doping has been successfully grown by spray method. The research on the effect of carbon doping on crystal structure and morfology of TiO2 has been prepared by varying carbon concentration (8% and 15% carbon). Analysis of SEM showed that the addition of carbon may increase the grain size. Thin film of TiO2 doped carbon 8% has the largest grain size 1.35 μm, while the smallest grain size is 0.45 μm. Meanwhile, for thin film TiO2 doped carbon 15% has the largest grain size 1.76 μm and smallest 0.9 μm. The XRD results showed the entire diffraction peak of thin film TiO2 doped carbon 8% and 15% were TiO2 anatase. The crystal size of thin film TiO2 doped carbon 8% was obtained at 638.08 Å and for thin film TiO2 doped carbon 15% the crystalline size of TiO2 thin film was 638.09 Å, this shows that the crystal size of both samples did not change significantly.    

SIGN IN Welcome!Log into your account your username your password Forgot your password Privacy policy PASSWORD RECOVERY Recover your password your email Struktol Home New fast measuring method for process optimization of sucrose crystallization New fast measuring method for process optimization of sucrose crystallization

2020 ◽  
pp. 49-52
Author(s):  
Trine Aabo Andersen
Keyword(s):  
Image Analysis ◽  
Process Optimization ◽  
Crystal Size ◽  
Measuring Method ◽  
Sieve Analysis ◽  
Image Analysis System ◽  
Line System ◽  
Non Invasive ◽  
Analysis System ◽  
User Friendly

A new fast measuring method for process optimization of sucrose crystallization using image analysis based on high quality images and algorithms is introduced. With the mobile, non-invasive at-line system all steps of the sucrose crystallization can be measured to determine the crystal size distribution. The image analysis system is easy to operate and is as well an efficient laboratory solution with user-friendly and customized software. In comparison to sieve analysis, image analyses performed with the ParticleTech Solution have been proven to be reliable.

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