Detachment effects during homoepitaxial growth of compact islands

1995 ◽  
Vol 52 (23) ◽  
pp. 16803-16806
Author(s):  
S. Harris
Keyword(s):  
Homoepitaxial Growth

Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DP04 ◽  
Author(s):  
Keiko Masumoto ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Chiaki Kudou ◽  
Johji Nishio ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Ion-Beam Assist Nano-Texturing of Films

2007 ◽  
Vol 1020 ◽  
Author(s):  
Vladimir Matias ◽  
Chris Sheehan ◽  
Alp T. Findikoglu
Keyword(s):  
Experimental Design ◽  
Single Crystal ◽  
Ion Beam ◽  
Fabrication Method ◽  
Polycrystalline Metal ◽  
Tape Transport ◽  
Homoepitaxial Growth ◽  
Ion Beam Assisted Deposition ◽  
High Throughput Experimentation ◽  
Out Of Plane

AbstractWe present an ion-beam based fabrication method for growth of single-crystal-like films that does not utilize epitaxy on single crystal substrates. We use ion-beam assisted texturing to obtain biaxial crystalline alignment in a film. This ion-beam assisted deposition (IBAD) texturing can be done on arbitrary, but smooth substrates, including flexible polycrystalline metal tapes. With IBAD texturing of MgO and subsequent homoepitaxial growth we have demonstrated an in-plane mosaic spread FWHM as low as 2° and out-of-plane alignment of 1°. The deposition system we use includes reel-to-reel tape transport for a linear transport of substrate materials through the deposition zones. This allows for high-throughput experimentation via a linear combinatorial experimental design.

Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation

2013 ◽  
Vol 740-742 ◽  
pp. 283-286
Author(s):  
Philip Hens ◽  
Julian Müller ◽  
Günter Wagner ◽  
Rickard Liljedahl ◽  
Erdmann Spiecker ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Structural Defects ◽  
Silicon Substrates ◽  
Growth Step ◽  
Planar Defects ◽  
Defect Generation ◽  
Defect Clusters ◽  
Homoepitaxial Growth ◽  
Cubic Silicon Carbide ◽  
Thick Layers

In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.

The effect of CO2 on the high-rate homoepitaxial growth of CVD single crystal diamonds

2011 ◽  
Vol 20 (4) ◽  
pp. 496-500 ◽  
Author(s):  
Q. Zhang ◽  
H.D. Li ◽  
S.H. Cheng ◽  
Q.L. Wang ◽  
L.A. Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Rate ◽  
Homoepitaxial Growth

scholarly journals Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1978 ◽  
Author(s):  
Yasuo Nakayama ◽  
Masaki Iwashita ◽  
Mitsuru Kikuchi ◽  
Ryohei Tsuruta ◽  
Koki Yoshida ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Lattice Distortion ◽  
Grazing Incidence ◽  
Valence Band Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Highly Sensitive ◽  
Doping Ratio

Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.

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