InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

1995 ◽  
Vol 52 (16) ◽  
pp. 11969-11981 ◽  
Author(s):  
M. Grundmann ◽  
O. Stier ◽  
D. Bimberg
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Strain Distribution ◽  
Optical Phonons

Strain distribution and optical phonons in InAs/InP self-assembled quantum dots

1999 ◽  
Vol 60 (23) ◽  
pp. 16013-16017 ◽  
Author(s):  
J. Groenen ◽  
C. Priester ◽  
R. Carles
Keyword(s):  
Quantum Dots ◽  
Strain Distribution ◽  
Optical Phonons ◽  
Self Assembled

Self-organized GaN/A1N hexagonal quantum-dots: strain distribution and electronic structure

2008 ◽  
Vol 17 (9) ◽  
pp. 3471-3478 ◽  
Author(s):  
Liu Yu-Min ◽  
Yu Zhong-Yuan ◽  
Ren Xiao-Min ◽  
Xu Zi-Ruan
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Strain Distribution ◽  
Self Organized

STRAIN DISTRIBUTION AND ELECTRONIC STRUCTURE OF SELF-ORGANIZED InAs/GaAs QUANTUM DOTS

2009 ◽  
Vol 18 (04) ◽  
pp. 553-560
Author(s):  
YUMIN LIU ◽  
ZIHUAN XU ◽  
ZHONGYUAN YU ◽  
BOYONG JIA ◽  
WENJUAN LU ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Quantum Dot ◽  
Strain Distribution ◽  
Energy Levels ◽  
Electronic Energy ◽  
Conduction Band Edge ◽  
Three Dimension ◽  
Self Organized ◽  
Piezoelectric Effects

This paper presents a finite element method for calculating the strain distribution, piezoelectric effects and their influences on the electronic structure of self-organized InAs/GaAs quantum dots. The models used for strain calculations are based on the continuum elastic theory, which is capable of treating the quantum dot of arbitrary shapes. A truncated pyramid shaped quantum dot model including the wetting layer is adopted in this work. The electronic energy levels of the InAs/GaAs systems are calculated by solving the three-dimension effective mass Schrödinger equation including the influences on the modification of conduction band edge due to the strain and piezoelectricity. The calculated results indicate that both strain and piezoelectric effects should be considered, especially in treating the electronic structure and optical characteristics for device applications.

Single-charge transport through hybrid core–shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Transport ◽  
Comprehensive Analysis ◽  
Energy Structure ◽  
Core Shell ◽  
Single Charge ◽  
Scanning Tunnelling Microscope ◽  
Single Carrier ◽  
Scanning Tunnelling

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.

Theoretical and experimental investigation of electronic structure and relaxation of colloidal nanocrystalline indium phosphide quantum dots

2003 ◽  
Vol 67 (7) ◽  
Author(s):  
Randy J. Ellingson ◽  
Jeff L. Blackburn ◽  
Jovan Nedeljkovic ◽  
Garry Rumbles ◽  
Marcus Jones ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Experimental Investigation ◽  
Electronic Structure ◽  
Indium Phosphide

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Confined optical phonons in semiconductor quantum dots

1999 ◽  
Vol 109 (5) ◽  
pp. 351-356 ◽  
Author(s):  
Xin-Qi Li ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots ◽  
Optical Phonons

Comparison of the k⋅p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots

2000 ◽  
Vol 76 (3) ◽  
pp. 339-341 ◽  
Author(s):  
L. W. Wang ◽  
A. J. Williamson ◽  
Alex Zunger ◽  
H. Jiang ◽  
J. Singh
Keyword(s):  
Quantum Dots ◽  
Electronic Structure
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