Optically detected cyclotron resonance on GaAs/AlxGa1−xAs quantum wells and quantum wires

1995 ◽  
Vol 52 (15) ◽  
pp. 11313-11318 ◽  
Author(s):  
D. M. Hofmann ◽  
M. Drechsler ◽  
C. Wetzel ◽  
B. K. Meyer ◽  
F. Hirler ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cyclotron Resonance ◽  
Quantum Wires ◽  
Optically Detected

Optically detected cyclotron resonance studies of InxGa1−xNyAs1−y∕GaAs quantum wells sandwiched between type-II AlAs∕GaAs superlattices

2007 ◽  
Vol 101 (7) ◽  
pp. 073705 ◽  
Author(s):  
D. Dagnelund ◽  
I. Vorona ◽  
X. J. Wang ◽  
I. A Buyanova ◽  
W. M. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cyclotron Resonance ◽  
Type Ii ◽  
Optically Detected

Optically detected cyclotron resonance of GaAs quantum wells

1993 ◽  
Vol 184 (1-4) ◽  
pp. 159-163 ◽  
Author(s):  
J.G. Michels ◽  
R.J. Warburton ◽  
R.J. Nicholas ◽  
J.J. Harris ◽  
C.T. Foxon
Keyword(s):  
Quantum Wells ◽  
Cyclotron Resonance ◽  
Optically Detected

Optically detected cyclotron resonance of GaAs quantum wells: Effective-mass measurements and offset effects

1992 ◽  
Vol 46 (20) ◽  
pp. 13394-13399 ◽  
Author(s):  
R. J. Warburton ◽  
J. G. Michels ◽  
R. J. Nicholas ◽  
J. J. Harris ◽  
C. T. Foxon
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Cyclotron Resonance ◽  
Mass Measurements ◽  
Optically Detected

Optically detected cyclotron resonance studies of multisubband quantum wells

1996 ◽  
Vol 29 (12) ◽  
pp. 3089-3095 ◽  
Author(s):  
Y T Dai ◽  
Y H Chang ◽  
T F Lee ◽  
Y F Chen ◽  
F F Fang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cyclotron Resonance ◽  
Optically Detected

OPTICALLY-DETECTED MICROWAVE RESONANCE IN InGaAsN/GaAs QUANTUM WELLS AND InAs/GaAs QUANTUM DOTS EMITTING AROUND 1.3 μm

2003 ◽  
Vol 02 (06) ◽  
pp. 469-478 ◽  
Author(s):  
P. G. BARANOV ◽  
N. G. ROMANOV ◽  
V. L. PREOBRAZHENSKI ◽  
A. Yu. EGOROV ◽  
V. M. USTINOV ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Cyclotron Resonance ◽  
Multiple Quantum Well ◽  
Dimensional System ◽  
Multiple Quantum ◽  
G Factor ◽  
Quantum Well Structures ◽  
Gaas Structure ◽  
Optically Detected

Optically-detected magnetic resonance (ODMR) and optically-detected cyclotron resonance (ODCR) were applied to study two types of nanostructures emitting around 1.3 μm: quantum wells with low nitrogen content and InAs / GaAs quantum dots (both isolated and vertically-coupled). ODMR with the axial symmetry (effective g factor |g‖|=3.61 and |g⊥|=0.7) was found in unannealed InGaAsN / GaAs multiple-quantum well structures and ascribed to electrons in the quantum wells; the sign of g factor is suggested to be negative. There is evidence that before annealing the InGaAsN / GaAs structure has properties, which are typical for quantum wells, but after annealing the structure is completely-changed and resembles a quantum-dot-like structure. The effect of cyclotron resonance on the luminescence of InAs quantum dots was found. The observed ODCR seems to belong to a two-dimensional system, such as a heterointerface InAs / GaAs .

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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