Optically detected cyclotron resonance studies of InxGa1−xNyAs1−y∕GaAs quantum wells sandwiched between type-II AlAs∕GaAs superlattices

2007 ◽  
Vol 101 (7) ◽  
pp. 073705 ◽  
Author(s):  
D. Dagnelund ◽  
I. Vorona ◽  
X. J. Wang ◽  
I. A Buyanova ◽  
W. M. Chen ◽  
...  
1993 ◽  
Vol 184 (1-4) ◽  
pp. 159-163 ◽  
Author(s):  
J.G. Michels ◽  
R.J. Warburton ◽  
R.J. Nicholas ◽  
J.J. Harris ◽  
C.T. Foxon

1992 ◽  
Vol 46 (20) ◽  
pp. 13394-13399 ◽  
Author(s):  
R. J. Warburton ◽  
J. G. Michels ◽  
R. J. Nicholas ◽  
J. J. Harris ◽  
C. T. Foxon

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1466-1470 ◽  
Author(s):  
M. P. SEMTSIV ◽  
S. DRESSLER ◽  
W. T. MASSELINK ◽  
M. GOIRAN ◽  
V. V. RYLKOV ◽  
...  

We investigate the properties of quasi-two-dimensional electrons in AlP quantum wells by measuring cyclotron resonance, quantum Hall effect, and Shubnikov de Haas oscillations in modulation-doped AlP - GaP type-II quantum wells. We find that in wide AlP wells, the lowest conduction band states are in the Xx and Xy valleys transverse to the growth direction, that the valley degeneracy of this state is gv=2, and that the cyclotron effective mass [Formula: see text]. These results indicate that the biaxial compressive strain resulting from the lattice mismatch of AlP quantum well with respect to the GaP substrate and barrier layers causes the longitudinal Xz valley to be lifted above the transverse Xx and Xy valleys. Further, the two-fold degeneracy of the Xx and Xy valleys indicates that the conduction band minimum in AlP is located exactly at the X-point of the Brillouin zone.


1996 ◽  
Vol 29 (12) ◽  
pp. 3089-3095 ◽  
Author(s):  
Y T Dai ◽  
Y H Chang ◽  
T F Lee ◽  
Y F Chen ◽  
F F Fang ◽  
...  

2003 ◽  
Vol 02 (06) ◽  
pp. 469-478 ◽  
Author(s):  
P. G. BARANOV ◽  
N. G. ROMANOV ◽  
V. L. PREOBRAZHENSKI ◽  
A. Yu. EGOROV ◽  
V. M. USTINOV ◽  
...  

Optically-detected magnetic resonance (ODMR) and optically-detected cyclotron resonance (ODCR) were applied to study two types of nanostructures emitting around 1.3 μm: quantum wells with low nitrogen content and InAs / GaAs quantum dots (both isolated and vertically-coupled). ODMR with the axial symmetry (effective g factor |g‖|=3.61 and |g⊥|=0.7) was found in unannealed InGaAsN / GaAs multiple-quantum well structures and ascribed to electrons in the quantum wells; the sign of g factor is suggested to be negative. There is evidence that before annealing the InGaAsN / GaAs structure has properties, which are typical for quantum wells, but after annealing the structure is completely-changed and resembles a quantum-dot-like structure. The effect of cyclotron resonance on the luminescence of InAs quantum dots was found. The observed ODCR seems to belong to a two-dimensional system, such as a heterointerface InAs / GaAs .


1995 ◽  
Vol 52 (15) ◽  
pp. 11313-11318 ◽  
Author(s):  
D. M. Hofmann ◽  
M. Drechsler ◽  
C. Wetzel ◽  
B. K. Meyer ◽  
F. Hirler ◽  
...  

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