Orientation dependence of grain-boundary critical current densities in high-Tcbicrystals

1995 ◽  
Vol 51 (10) ◽  
pp. 6792-6795 ◽  
Author(s):  
T. Amrein ◽  
L. Schultz ◽  
B. Kabius ◽  
K. Urban
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.


2004 ◽  
Vol 85 (14) ◽  
pp. 2842-2844 ◽  
Author(s):  
H. Kitaguchi ◽  
A. Matsumoto ◽  
H. Kumakura ◽  
T. Doi ◽  
H. Yamamoto ◽  
...  

2006 ◽  
Vol 89 (13) ◽  
pp. 132510 ◽  
Author(s):  
Xianping Zhang ◽  
Zhaoshun Gao ◽  
Dongliang Wang ◽  
Zhengguang Yu ◽  
Yanwei Ma ◽  
...  

Cryogenics ◽  
1994 ◽  
Vol 34 (4) ◽  
pp. 329-334
Author(s):  
H.L Ji ◽  
Z.X Shi ◽  
Z.Y Zeng ◽  
X Jin ◽  
H.C Fan ◽  
...  

1989 ◽  
Vol 169 ◽  
Author(s):  
X.K. Wang ◽  
D.X. Li ◽  
S.N. Song ◽  
J.Q. Zheng ◽  
R.P.H. Chang ◽  
...  

AbstractEpitaxial thin films of YBaCuO were prepared by multilayer deposition from Y, Cu, and BaF2 sources with: (1) the a‐axis perpendicular to (100)SrTiO3; (2) the c‐axis perpendicular to (100)SrTiO3; and (3) the [110] axis perpendicular to (110)SrTiO3. XRD patterns as well as SEM and HREM images confirm that the films are highly oriented, essentially epitaxial. Both the a‐axis oriented and the c‐axis oriented films exhibit zero resistance at 91K. The [110] oriented film shows the sharpest transiton with a transition width of IK and zero resistance at 85K. The zero field critical current density, Jc, determined magnetically, is in excess of 107A/cm2 at 4.4K and 1.04 x 106A/cm2 at 77K for the c‐axis oriented film; for the a‐axis oriented film we obtained 6.7 x 106A/cm2 at 4.4K and 1.2 x 105A/cm2 at 77K. The orientation dependence of the critical current density in the basal plane of the a‐axis oriented film was studied. The largest Jc's occur along the in‐plane <100> axes of the substrate.


2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Zhigang Li ◽  
Weike Wang ◽  
Li Zhang ◽  
Zhaorong Yang ◽  
Mingliang Tian ◽  
...  

2014 ◽  
Vol 792 ◽  
pp. 21-26 ◽  
Author(s):  
Tatiana Prikhna ◽  
Michael Eisterer ◽  
Wolfgang Gawalek ◽  
Athanasios G. Mamalis ◽  
Artem Kozyrev ◽  
...  

The high pressure (50 MPa - 2 GPa) – high temperature synthesized MgB2 bulk materials are characterized by nearly theoretical density (1-2% porosity), 80-98% connectivity, extremely high critical current densities (e.g. at 20 K, in 0–1 T jc=1.3–1.0 MA·cm-2 (with 10% SiC) and jc= 0.92 – 0.73 MA·cm-2 (without doping)), large irreversibility fields (Birr(18.4 K) =15 T and Birr (0 K) = 32.5 T) and high upper critical fields (Bc2 (22 K) =15 T and Bc2(0 K) ~ 42.1 T). The transformation of grain boundary pinning to point pinning in MgB2-based materials with increasing manufacturing temperature (from 800 to 1050 oC) under pressures from 0.1 to 2 GPa correlates well with an increase in critical current density in low external magnetic fields caused by the redistribution of boron and the oxygen impurities in the material structure. As the manufacturing temperature increases, the discontinuous oxygen enriched layers transform into distinct Mg-B-O inclusions and the size and amount of inclusions of higher magnesium borides MgBX (X>4) are reduced. The effect of oxygen and boron redistribution can be enhanced by Ti or SiC additions.


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