Monte Carlo simulation of high-field hopping on a bond-disordered lattice

1995 ◽  
Vol 51 (7) ◽  
pp. 4622-4625 ◽  
Author(s):  
Yu. N. Gartstein ◽  
S. Jeyadev ◽  
E. M. Conwell
1995 ◽  
Vol 38 (3) ◽  
pp. 653-660 ◽  
Author(s):  
J. Fogarty ◽  
W. Kong ◽  
R. Solanki

1993 ◽  
Vol 176 (1) ◽  
pp. 203-217 ◽  
Author(s):  
P. Poli ◽  
L. Rota ◽  
L. Reggiani ◽  
R. Bertoncini ◽  
D. K. Ferry

1996 ◽  
Vol 43 (12) ◽  
pp. 2303-2305 ◽  
Author(s):  
G.M. Dunn ◽  
G.J. Rees ◽  
J.P.R. David ◽  
S.A. Plimmer ◽  
D.C. Herbert

1999 ◽  
Vol 14 (11) ◽  
pp. 994-1000 ◽  
Author(s):  
G M Dunn ◽  
R Ghin ◽  
G J Rees ◽  
J P R David ◽  
S Plimmer ◽  
...  

2007 ◽  
Vol 21 (04) ◽  
pp. 199-206 ◽  
Author(s):  
H. ARABSHAHI

An ensemble Monte Carlo simulation has been used to model bulk electron transport at 300 K for both the natural wurtzite and the zincblende lattice phases of GaN . Electronic states within the conduction band are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone, but for zincblende GaN , the simpler spherical parabolic band approximation has also been tested, for comparison. In the case of wurtzite GaN , transport has been modeled with an electric field applied both parallel and perpendicular to the (0001) c-axis. The steady state velocity-field characteristics are in fair agreement with other recent calculations.


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